Atomistic simulation and compact modeling of atomically thin transistors

Abstract

In this paper, we show the impact of channel thickness scaling on material and transistor behavior. we present effect of the strain on energy bandgap in scaled Si and Ge slabs for varying thickness. For lower effective mass III-V channel materials, influence of the lower density of states and contribution of multiple subbands on the gate capacitance and drain current in thin body metal-oxide-semiconductor devices are discussed using the numerical simulation and compact model. We present doping strategy for monolayer MoS2 to increase free charge carrier density to increase drive current in MoS2 based transistors. We also discuss compact modeling approach for 2D transition metal dichalcogenide materials-based transistors for early circuit evaluation. © 2018 IEEE.