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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/22401
Title: BSIM-IMG: Advanced Model for FDSOI Transistors with Back Channel Inversion
Authors: Agarwal H.
Kushwaha P.
Dasgupta, Avirup
Y-Kao M.
Morshed T.
Workman G.
Shanbhag K.
Li X.
Vinothkumar V.
Chauhan Y.S.
Salahuddin S.
Hu C.
Published in: 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings
4th Electron Devices Technology and Manufacturing Conference, EDTM 2020
Abstract: FDSOI devices are prominently used in low power circuits and high frequency domains due to their superior RF and analog performance, thanks to back-bias capability and relatively ease of transistor design over FinFETs and planar bulk transistors. BSIM-IMG is the industry standard compact model for simulating FDSOI devices. In this work, we will discuss recent enhancements made in the BSIM-IMG model for accurate modeling of the FDSOI transistors. The back gate inversion is more physically modeled in the latest BSIM-IMG model. We will present a new 1/f noise model, which is validated with the experimental data. Improved output conductance, mobility and gate current models are also discussed. All the enhancements are done in such a way that benchmark RF figure of merit are met. © 2020 IEEE.
Citation: 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings (2020)
URI: https://doi.org/10.1109/EDTM47692.2020.9117979
http://repository.iitr.ac.in/handle/123456789/22401
Issue Date: 2020
Publisher: Institute of Electrical and Electronics Engineers Inc.
Keywords: back-side inversion
BSIM-IMG
compact model
FDSOI
ISBN: 9.78173E+12
Author Scopus IDs: 53866052200
56149406100
56389226300
57219266712
23567080600
7005874215
24588077900
57211170892
57219270253
14029622100
8544299000
35594318600
Author Affiliations: Agarwal, H., Indian Institute of Technology Jodhpur, India
Kushwaha, P., University of California, Berkeley, United States
Dasgupta, A., University of California, Berkeley, United States
Y-Kao, M., University of California, Berkeley, United States
Morshed, T., Globalfoundries Inc., Compact Modeling and Characterization Division, United States
Workman, G., Indian Institute of Technology Kanpur, India
Shanbhag, K., Globalfoundries Inc., Compact Modeling and Characterization Division, United States
Li, X., Globalfoundries Inc., Compact Modeling and Characterization Division, United States
Vinothkumar, V., Indian Institute of Technology Kanpur, India
Chauhan, Y.S., University of California, Berkeley, United States
Salahuddin, S., University of California, Berkeley, United States
Hu, C., University of California, Berkeley, United States
Corresponding Author: Agarwal, H.; Indian Institute of Technology JodhpurIndia; email: agarwalh@iitj.ac.in
Appears in Collections:Conference Publications [ECE]

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