http://repository.iitr.ac.in/handle/123456789/22358
Title: | Modeling of Induced Gate Thermal Noise Including Back-Bias Effect in FDSOI MOSFET |
Authors: | Dabhi C.K. Dasgupta, Avirup Kushwaha P. Agarwal H. Hu C. Chauhan Y.S. |
Published in: | IEEE Microwave and Wireless Components Letters |
Abstract: | We present a charge-based compact model for induced gate thermal noise for a fully depleted silicon-on-insulator transistor. The model uses front- and back-gate charges as well as the respective mobilities for the development of analytical expression. The model is implemented in Verilog-A and validated with experimentally calibrated TCAD simulations. The model predicts the high-frequency behavior with good accuracy while capturing the back-bias dependence. © 2001-2012 IEEE. |
Citation: | IEEE Microwave and Wireless Components Letters, 28(7): 597-599 |
URI: | https://doi.org/10.1109/LMWC.2018.2834507 http://repository.iitr.ac.in/handle/123456789/22358 |
Issue Date: | 2018 |
Publisher: | Institute of Electrical and Electronics Engineers Inc. |
Keywords: | Compact model fully depleted silicon on insulator (FDSOI) high frequency induced gate noise noise power spectral density (PSD) ultrathin body silicon on insulator ultrathin body with thin box (UTBB) |
ISSN: | 15311309 |
Author Scopus IDs: | 57200141180 56389226300 56149406100 53866052200 35594318600 14029622100 |
Author Affiliations: | Dabhi, C.K., Department of Electrical Engineering, IIT Kanpur, Kanpur, 208016, India Dasgupta, A., Department of Electrical Engineering, IIT Kanpur, Kanpur, 208016, India Kushwaha, P., Department of Electrical Engineering and Computer Science, University of California at Berkely, Berkely, CA 94720, United States Agarwal, H., Department of Electrical Engineering and Computer Science, University of California at Berkely, Berkely, CA 94720, United States Hu, C., Department of Electrical Engineering and Computer Science, University of California at Berkely, Berkely, CA 94720, United States Chauhan, Y.S., Department of Electrical Engineering, IIT Kanpur, Kanpur, 208016, India |
Funding Details: | Manuscript received January 6, 2018; accepted March 12, 2018. Date of publication May 24, 2018; date of current version July 4, 2018. This work was supported by the Department of Science and Technology, Government of India. (Corresponding author: Chetan Kumar Dabhi.) C. K. Dabhi, A. Dasgupta, and Y. S. Chauhan are with the Department of Electrical Engineering, IIT Kanpur, Kanpur 208016, India (e-mail: chetant@iitk.ac.in; chauhan@iitk.ac.in). Department of Science and Technology, Government of Kerala |
Corresponding Author: | Dabhi, C.K.; Department of Electrical Engineering, India; email: chetant@iitk.ac.in |
Appears in Collections: | Journal Publications [ECE] |
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