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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/22351
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dc.contributor.authorDasgupta, Avirup-
dc.contributor.authorParihar S.S.-
dc.contributor.authorKushwaha P.-
dc.contributor.authorAgarwal H.-
dc.contributor.authorKao M.-Y.-
dc.contributor.authorSalahuddin S.-
dc.contributor.authorChauhan Y.S.-
dc.contributor.authorHu C.-
dc.date.accessioned2022-03-21T09:45:42Z-
dc.date.available2022-03-21T09:45:42Z-
dc.date.issued2020-
dc.identifier.citationIEEE Transactions on Electron Devices, 67(2): 730-737-
dc.identifier.issn189383-
dc.identifier.urihttps://doi.org/10.1109/TED.2019.2960269-
dc.identifier.urihttp://repository.iitr.ac.in/handle/123456789/22351-
dc.description.abstractWe propose a compact model for nanosheet FETs that take the effects of quantum confinement into account. The model captures the nanosheet width and thickness dependence of the electrostatic dimension, density of states, effective mass, subband energies, and threshold voltages and includes them in the charge calculation, resulting in an accurate terminal charge and current characteristics. The model has been implemented using Verilog-A in the BSIM-CMG framework for all simulations. It has been validated with band-structure calculation-based TCAD simulations as well as measured data. We have also highlighted the significance of quantum mechanical effects on analog and RF performance of the device. © 1963-2012 IEEE.-
dc.language.isoen_US-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.subjectBandgap-
dc.subjectcompact model-
dc.subjectdensity of states (DOS)-
dc.subjectdimension-
dc.subjecteffective mass-
dc.subjectgate-all-around-
dc.subjectnanosheet-
dc.subjectnanowire-
dc.subjectquantum capacitance-
dc.subjectSPICE-
dc.subjectsubband energy-
dc.titleBSIM compact model of quantum confinement in advanced nanosheet FETs-
dc.typeArticle-
dc.scopusid56389226300-
dc.scopusid57014898700-
dc.scopusid56149406100-
dc.scopusid53866052200-
dc.scopusid57201524601-
dc.scopusid8544299000-
dc.scopusid14029622100-
dc.scopusid35594318600-
dc.affiliationDasgupta, A., Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA 94720-2284, United States-
dc.affiliationParihar, S.S., Department of Electrical Engineering, IIT Kanpur, Kanpur, 208016, India-
dc.affiliationKushwaha, P., Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA 94720-2284, United States-
dc.affiliationAgarwal, H., Department of Electrical Engineering, IIT Jodhpur, Jodhpur, 342037, India-
dc.affiliationKao, M.-Y., Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA 94720-2284, United States-
dc.affiliationSalahuddin, S., Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA 94720-2284, United States-
dc.affiliationChauhan, Y.S., Department of Electrical Engineering, IIT Kanpur, Kanpur, 208016, India-
dc.affiliationHu, C., Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA 94720-2284, United States-
dc.description.fundingManuscript received September 27, 2019; revised November 25, 2019; accepted December 13, 2019. Date of publication January 10, 2020; date of current version January 27, 2020. This work was supported by the Berkeley Device Modeling Center and the Department of Science and Technology, India. The review of this article was arranged by Editor B. Iñiguez. (Corresponding author: Avirup Dasgupta.) A. Dasgupta, P. Kushwaha, M.-Y. Kao, S. Salahuddin, and C. Hu are with the Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA 94720-2284 USA (e-mail: avirup@berkeley.edu). Department of Science and Technology, Ministry of Science and Technology, India, डीएसटी-
dc.description.correspondingauthorDasgupta, A.; Department of Electrical Engineering and Computer Sciences, United States; email: avirup@berkeley.edu-
Appears in Collections:Journal Publications [ECE]

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