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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/22350
Title: Compact Model for Geometry Dependent Mobility in Nanosheet FETs
Authors: Dasgupta, Avirup
Parihar S.S.
Agarwal H.
Kushwaha P.
Chauhan Y.S.
Hu C.
Published in: IEEE Electron Device Letters
Abstract: We propose an updated compact model for mobility in Nanosheet FETs. This is necessary since Nanosheet FETs exhibit significant mobility degradation with thickness and width scaling caused by centroid shift, changing effective mass due to quantum confinement as well as various crystal orientations of the various conduction planes. The model takes all of these effects into account. It has been implemented in Verilog-A and validated with experimental data. To the best of our knowledge, this is the first compact model capturing the effect of nanosheet scaling on mobility. © 1980-2012 IEEE.
Citation: IEEE Electron Device Letters, 41(3): 313-316
URI: https://doi.org/10.1109/LED.2020.2967782
http://repository.iitr.ac.in/handle/123456789/22350
Issue Date: 2020
Publisher: Institute of Electrical and Electronics Engineers Inc.
Keywords: centroid
compact model
gate-all-around
mobility
mobility degradation
Nanosheet
quantum
ISSN: 7413106
Author Scopus IDs: 56389226300
57014898700
53866052200
56149406100
14029622100
35594318600
Author Affiliations: Dasgupta, A., Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA 94720-2284, United States
Parihar, S.S., Department of Electrical Engineering, IIT Kanpur, Kanpur, 208016, India
Agarwal, H., Department of Electrical Engineering, IIT Jodhpur, Jodhpur, 342037, India
Kushwaha, P., Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA 94720-2284, United States
Chauhan, Y.S., Department of Electrical Engineering, IIT Kanpur, Kanpur, 208016, India
Hu, C., Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA 94720-2284, United States
Funding Details: This work was supported in part by the Berkeley Device Modeling Center and in part by the Department of Science and Technology, Government of India. The review of this letter was arranged by Editor V. Moroz. Manuscript received January 1, 2020; revised January 11, 2020; accepted January 14, 2020. Date of publication January 20, 2020; date of current version February 25, 2020. This work was supported in part by the Berkeley Device Modeling Center and in part by the Department of Science and Technology, Government of India. The review of this letter was arranged by Editor V. Moroz. (Corresponding author: Avirup Dasgupta.) Avirup Dasgupta, Pragya Kushwaha, and Chenming Hu are with the Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA 94720-2284 USA (e-mail: avirup@berkeley.edu). Department of Science and Technology, Ministry of Science and Technology, India, डीएसटी; Department of Science and Technology, Government of Kerala
Corresponding Author: Dasgupta, A.; Department of Electrical Engineering and Computer Sciences, United States; email: avirup@berkeley.edu
Appears in Collections:Journal Publications [ECE]

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