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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/20165
Title: Effect of Metal Oxide Nanoparticles on Carbon Nanotube Device Characteristics
Authors: Kumar N.
Navani, Naveen Kumar
Manhas, Sanjeev Kumar
Published in: Journal of Electronic Materials
Abstract: In this paper, we investigate the reduction of the Schottky barrier (SB) height at the metal and semiconducting single-walled carbon nanotube (SWNT) junction by the decoration of SWNTs using metal oxide nanoparticles (NPs). Interdigitated electrodes are fabricated (finger length 40 μm, width 3 μm, with space of 3 μm) on thermally grown silicon dioxide substrate. Thereafter, the SWNTs are aligned between the interdigitated electrodes. Following the decoration of SWNTs using metal oxide NPs, the devices are characterized. Decoration of SWNTs with metal oxide NPs reduces the SB height significantly. We find a reduction of SB height by 91 meV with titanium dioxide (TiO2) NPs and 150 meV with zinc oxide (ZnO) NPs. As compared to the bare SWNTs, the conductance of the devices improves by ∼ 1.5X and ∼ 2.1X due to the decoration of the SWNTs using TiO2 and ZnO NPs, respectively. This technique is of vital importance in decreasing the response time and enhancing the switching speed of the CNT-based sensors. © 2020, The Minerals, Metals & Materials Society.
Citation: Journal of Electronic Materials, 50(2): 528-536
URI: https://doi.org/10.1007/s11664-020-08579-9
http://repository.iitr.ac.in/handle/123456789/20165
Issue Date: 2021
Publisher: Springer
Keywords: Decoration
metal oxide nanoparticles
Schottky barrier height
semiconducting carbon nanotubes
semiconducting single-walled carbon nanotubes
ISSN: 3615235
Author Scopus IDs: 57190668111
6507073924
6602269066
Author Affiliations: Kumar, N., Department of Electronics and Communication Engineering, Indian Institute of Technology (IIT), Roorkee, Uttarakhand 247 667, India
Navani, N.K., Department of Biotechnology, Indian Institute of Technology (IIT), Roorkee, Uttarakhand 247 667, India
Manhas, S.K., Department of Electronics and Communication Engineering, Indian Institute of Technology (IIT), Roorkee, Uttarakhand 247 667, India
Corresponding Author: Manhas, S.K.; Department of Electronics and Communication Engineering, India; email: samanfec@iitr.ac.in
Appears in Collections:Journal Publications [BT]

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