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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/19655
Title: Influences of series resistance and epitaxial doping densities on the terahertz performance of gallium nitride avalanche transit time source: A high-power 1.0 THz radiator
Authors: Khan S.
Acharyya A.
Biswas A.
Sarkar, Biplab
Inokawa H.
Dhar R.S.
Published in: Journal of Physics: Conference Series
Abstract: Two-dimensional large-signal and noise simulations are used to study the terahertz (THz) performance of Gallium Nitride (GaN) avalanche transit time source (ATT) source. A comprehensive model of parasitic series resistance has been developed by which the effect of series resistance on the large-signal and noise performance of the 1.0 THz GaN ATT source has been investigated; the proposed model is based on time varying depletion width modulation under large-signal oscillating condition. Significant amount of deterioration in power output and efficiency have been observed due to the existence of series resistance of the device. On the other hand, the realization of the optimized structure and doping profile as per the theoretical design is a tricky job by considering the state-of-the-art GaN fabrication technology. Especially, achieving the absolute values of epitaxial doping densities is almost an unrealistic task. Therefore, it is very important to acquire the knowledge about how much extent the power output, series resistance and noise measure of the source are affected due to the change in doping level of both n- and p-layers. In the present study, the sensitivities of the above-mentioned parameters with respect to the change in the doping densities of n- and p-layers have been investigated.
Citation: Journal of Physics: Conference Series, 2020
URI: https://doi.org/10.1088/1742-6596/1706/1/012059
http://repository.iitr.ac.in/handle/123456789/19655
Issue Date: 2020
Keywords: Deterioration
Electric resistance
III-V semiconductors
Nitrides
Comprehensive model
Fabrication Technologies
Gallium nitrides (GaN)
Noise performance
Optimized structures
Parasitic series resistance
Series resistances
Theoretical design
Galliu
ISSN: 17426588
Author Scopus IDs: 57221208346
54382922900
47961011100
57205868869
7003452018
49461206300
Author Affiliations: Khan, S., School of Mines and Metallurgy, Kazi Nazrul University, Asansol, Burdwan, West Bengal, 713340, India
Acharyya, A., Department of Electronics and Communication Engineering, Cooch Behar Government Engineering College, Cooch Behar, West Bengal, 73
Funding Details: Science and Engineering Research Board, SERB: ECR/2017/000024/ES Tokyo Medical and Dental University, TMDU: 2051.The present work is funded by Science and Engineering Research Board (SERB), Government of India, through Early Career Research (ECR) Award scheme to Dr. A. Biswas (Grant File Number: ECR/2017/000024/ES). Dr. Arindam Biswas, Prof. Hiroshi Inokawa, Dr. Ari.
Corresponding Author: Acharyya, A.; Department of Electronics and Communication Engineering, India; email: ari_besu@yahoo.co.in
Appears in Collections:Conference Publications [ECE]

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