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Title: Impact of NBTI Aging on Self-Heating in Nanowire FET
Authors: Prakash O.
Amrouch H.
Manhas, Sanjeev Kumar
Henkel J.
Di Natale G.
Bolchini C.
Vatajelu E.-I.
Published in: Proceedings of the 2020 Design, Automation and Test in Europe Conference and Exhibition, DATE 2020
Proceedings of Conference and Exhibition in Europe: Design, Automation and Test , DATE 2020
Abstract: This is the first work that investigates the impact of Negative Bias Temperature Instability (NBTI) on the Self-Heating (SH) phenomenon in Silicon Nanowire Field-Effect Transistors (SiNW-FETs). We investigate the individual as well as joint impact of NBTI and SH on pSiNW-FETs and demonstrate that NBTI-induced traps mitigate SH effects due to reduced current densities. Our Technology CAD (TCAD)-based SiNW-FET device is calibrated against experimental data. It accounts for thermodynamic and hydrodynamic effects in 3-D nano structures for accurate modeling of carrier transport mechanisms. Our analysis focuses on how lattice temperature, thermal resistance and thermal capacitance of pSiNW-FETs are affected due to NBTI, demonstrating that accurate self-heating modeling necessitates considering the effects that NBTI aging has over time. Hence, NBTI and SH effects need to be jointly and not individually modeled. Our evaluation shows that an individual modeling of NBTI and SH effects leads to a noticeable overestimation of the overall induced delay increase in circuits due to the impact of NBTI traps on SH mitigation. Hence, it is necessary to model NBTI and SH effects jointly in order to estimate efficient (i.e. small, yet sufficient) timing guardbands that protect circuits against timing violations, which will occur at runtime due to delay increases induced by aging and self-heating.
Citation: Proceedings of the 2020 Design, Automation and Test in Europe Conference and Exhibition, DATE 2020, 2020, 1514- 1519. ACM Special Interest Group on Design Automation (SIGDA)
et al.
European Design and Automation Association (EDAA)
European Electronic Chips and Systems Design Initiative (ECSI)
IEEE Council on Electronic Design Automation (CEDA)
SEMI Strategic Technology C
Issue Date: 2020
Publisher: Institute of Electrical and Electronics Engineers Inc.
Keywords: interface traps
Delay circuits
Electronic design automation
Field effect transistors
Silicon compounds
Accurate modeling
Carrier transport mechanisms
Hydrodynamic effect
Individual modeling
Lattice temperatures
Silicon nanowire field
ISBN: 9.78398E+12
Author Scopus IDs: 57218228391
Author Affiliations: Prakash, O., Karlsruhe Institute of Technology, Karlsruhe, Germany
Amrouch, H., Karlsruhe Institute of Technology, Karlsruhe, Germany
Manhas, S., Karlsruhe Institute of Technology, Karlsruhe, Germany
Henkel, J., Karlsruhe Institute of Technology, Karls
Appears in Collections:Conference Publications [ECE]

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