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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/19605
Title: Numerical Simulation of Enhanced-Reliability Filleted-Gate AlGaN/GaN HEMT
Authors: Ray A.
Bordoloi S.
Sarkar, Biplab
Agarwal P.
Trivedi G.
Published in: Journal of Electronic Materials
Abstract: Reliability has been one of the major concerns for AlGaN/GaN high-electron-mobility transistors (HEMTs) over the past decades owing to their high-power operation. Although significant progress has been made in recent years, to position AlGaN/GaN HEMT technology as a disruptive technology, better understanding of reliability phenomena and their enhancement is necessary. Greater strength of physical phenomena such as converse piezoelectric strain, electric field, electron temperature, and Joule heating accelerates the degradation and reduces the lifespan of such devices. A detailed numerical study has been carried out to observe the impact of gate filleting on the performance of a AlGaN/GaN HEMT. It is observed that the converse piezoelectric strain in the AlGaN barrier layer, as well as the electron and lattice temperatures are suppressed due to the filleting of the gate geometry. To understand this more deeply, a comparison is drawn between field-plate rectangular-gate HEMTs and filleted-gate HEMTs with and without a field plate. For the filleted-gate HEMTs with and without a field plate, the electric field and converse piezoelectric strain are lower by 38% and 30%, respectively, as compared with the rectangular-gate HEMT with a field plate. As the filleting radius is increased, the gate leakage current and lattice temperature at the gate/AlGaN interface are reduced and the OFF-state reliability is enhanced, together with a reduction in the converse piezoelectric strain and electron temperature. Based on the presented analysis, a filleted-gate HEMT is proposed as a potential candidate to mitigate damage induced by converse piezoelectric strain, electron temperature, and Joule heating in future AlGaN/GaN-based high-power devices.
Citation: Journal of Electronic Materials(2020), 49(3): 2018-2031
URI: https://doi.org/10.1007/s11664-019-07905-0
http://repository.iitr.ac.in/handle/123456789/19605
Issue Date: 2020
Publisher: IOP Publishing Ltd
Keywords: AlGaN/GaN HEMT
converse piezoelectric strain
electric field
electron temperature
gate geometry
Joule heating
Aluminum alloys
Aluminum gallium nitride
Electric fields
Electron temperature
Electrons
Gallium alloys
Gallium nitride
III-V semiconductors
Interface states
Joule heating
Leakage currents
Piezoelectric transducers
Piezoelectricity
Power semic
ISSN: 3615235
Author Scopus IDs: 57202771757
56740875100
57205868869
57203083733
14523648600
Author Affiliations: Ray, A., Department of EEE, IIT Guwahati, Guwahati, Assam 781039, India, Department of ECE, NERIST, Nirjuli, Arunachal Pradesh 791109, India
Bordoloi, S., Department of EEE, IIT Guwahati, Guwahati, Assam 781039, India, Department of ECE, NIT Mizoram,
Corresponding Author: Ray, A.; Department of ECE, India; email: ashok.ray@iitg.ac.in
Appears in Collections:Journal Publications [ECE]

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