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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/18551
Title: The use of wide-bandgap CuCl on silicon for ultra-violet photonics
Authors: O'Reilly L.
Natarajan G.
McNally P.J.
Daniels S.
Lucas O.F.
Mitra, Anirban
Martinez-Rosas M.
Bradley L.
Reader A.
Cameron D.
McInerney J.G.
Farrell G.
Denieffe D.M.
Barry L.P.
Gamble H.S.
Hughes P.J.
Moore A.
Published in: Proceedings of SPIE - The International Society for Optical Engineering
Abstract: γ-CuCl is a wide-bandgap (Eg = 3.395eV), direct bandgap, semiconductor material with a cubic zincblende lattice structure. Its lattice constant, aCuCl = 0.541 nm, means that the lattice mismatch to Si (aSi = 0.543 nm) is <0.5%. γ-CuCl on Si - the growth of a wide-bandgap, direct bandgap, optoelectronics material on silicon substrates is a novel material system, with compatibility to current Si based electronic/optoelectronics technologies. The authors report on early investigations consisting of the growth of polycrystalline, CuCl thin films on Si (100), Si (111), and quartz substrates by physical vapour deposition. X-ray diffraction (XRD) studies indicate that CuCl grows preferentially in the <111> direction. Photoluminescence (PL) and Cathodoluminescence (CL) reveal a strong room temperature Z3 excitonic emission at ∼ 387nm. A demonstration electroluminescent device (ELD) structure based on the deposition of CuCl on Si was developed. Preliminary electroluminescence measurements confirm UV light emission at wavelengths of ∼380nm and ∼387nm, due to excitonic behaviour. A further emission occurs in the bandgap region at -360nm.
Citation: Proceedings of SPIE - The International Society for Optical Engineering, (2005), 29- 36. Dublin
URI: https://doi.org/10.1117/12.602729
http://repository.iitr.ac.in/handle/123456789/18551
Issue Date: 2005
Keywords: Cathodoluminescence
Copper Chloride
Electroluminescence
Exciton
Photoluminescence
Silicon
Ultra-violet
Wide-bandgap semiconductor
ISSN: 0277786X
Author Scopus IDs: 15056648200
7004035980
7102317773
8842395600
9044337800
57209787039
10143530500
35756512900
7005446774
26643140300
Author Affiliations: O'Reilly, L., Nanomaterials Processing Lab (NPL), School of Electronic Engineering, Dublin City University, Dublin 9, Ireland
Natarajan, G., Nanomaterials Processing Lab (NPL), School of Electronic Engineering, Dublin City University, Dublin 9, Ireland
McNally, P.J., Nanomaterials Processing Lab (NPL), School of Electronic Engineering, Dublin City University, Dublin 9, Ireland
Daniels, S., Nanomaterials Processing Lab (NPL), School of Electronic Engineering, Dublin City University, Dublin 9, Ireland
Lucas, O.F., Nanomaterials Processing Lab (NPL), School of Electronic Engineering, Dublin City University, Dublin 9, Ireland
Mitra, A., Optoelectronics Laboratory, Trinity College, Dublin 2, Ireland
Martinez-Rosas, M., Optoelectronics Laboratory, Trinity College, Dublin 2, Ireland
Bradley, L., Optoelectronics Laboratory, Trinity College, Dublin 2, Ireland
Reader, A., Nanomaterials Processing Lab (NPL), School of Electronic Engineering, Dublin City University, Dublin 9, Ireland
Cameron, D., Advanced Surface Technology Research Laboratory (ASTRaL), Mikkeli Research Centre, Lappeenranta University of Technology, PO Box 181, 50101 Mikkeli, Finland
Corresponding Author: O'Reilly, L.; Nanomaterials Processing Lab (NPL), School of Electronic Engineering, Dublin City University, Dublin 9, Ireland
Appears in Collections:Conference Publications [PH]

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