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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/18475
Title: Raman studies of ZnO: Co thin films
Authors: Zhou H.
Chen L.
Malik, Vivek K.
Knies C.
Hofmann D.M.
Bhatti K.P.
Chaudhary S.
Klar P.J.
Heimbrodt W.
Klingshirn C.
Kalt H.
Published in: Proceedings of Physica Status Solidi (A) Applications and Materials Science
Abstract: In this paper we investigate cobalt doped ZnO thin films prepared via different sol-gel methods. XRD shows only the diffraction peaks from wurtzite ZnO without secondary phase, as widely reported in literature, for the Co contents of our samples of 3 to 12%. Raman spectroscopy reveals the existence of antiferromagnetic cobalt oxides like CoO and Co 3O 4 already in intermediately doped samples. Furthermore, the Raman shifts of the doped samples exhibit a shift to higher energy with increasing Co doping content. Unfortunately, Raman spectroscopy is not sensitive to metallic Co and, therefore, cannot be employed to explore the presence of Co clusters. However, we demonstrate that XRD is not a suitable method to rule out the existence of magnetic secondary phases in ZnO doped with transition metals. © 2007 WILEY-VCH Verlag GmbH & Co. KOaA.
Citation: Proceedings of Physica Status Solidi (A) Applications and Materials Science, (2007), 112- 117
URI: https://doi.org/10.1002/pssa.200673019
http://repository.iitr.ac.in/handle/123456789/18475
Issue Date: 2007
Keywords: Antiferromagnetic cobalt oxides
Magnetic secondary phases
Raman shifts
Antiferromagnetism
Cobalt
Raman spectroscopy
Sol-gels
Transition metals
X ray diffraction
Zinc oxide
Thin films
ISSN: 18626300
Author Scopus IDs: 23975285300
57192609266
24758795000
23008910900
7201695611
8894156400
7102053581
7004564961
56233158000
7005513491
56250274500
Author Affiliations: Zhou, H., Institut für Angewandte Physik, Universität Karlsruhe (TH), Wolfgang-Gaede-Str. 1, 76131 Karlsruhe, Germany
Chen, L., Material Sciences Center, Department of Physics, Renthof 5, 35032 Marburg, Germany
Malik, V., Institut für Angewandte Physik, Universität Karlsruhe (TH), Wolfgang-Gaede-Str. 1, 76131 Karlsruhe, Germany, Indian Institute of Technology, Delhi, India
Knies, C., I. Physics Institute, University of Giessen, Heinrich-Buff-Ring 16, 35392 Gießen, Germany
Hofmann, D.M., I. Physics Institute, University of Giessen, Heinrich-Buff-Ring 16, 35392 Gießen, Germany
Bhatti, K.P., Indian Institute of Technology, Delhi, India
Chaudhary, S., Indian Institute of Technology, Delhi, India
Klar, P.J., I. Physics Institute, University of Giessen, Heinrich-Buff-Ring 16, 35392 Gießen, Germany
Heimbrodt, W., Material Sciences Center, Department of Physics, Renthof 5, 35032 Marburg, Germany
Klingshirn, C., Institut für Angewandte Physik, Universität Karlsruhe (TH), Wolfgang-Gaede-Str. 1, 76131 Karlsruhe, Germany
Kalt, H., Institut für Angewandte Physik, Universität Karlsruhe (TH), Wolfgang-Gaede-Str. 1, 76131 Karlsruhe, Germany
Corresponding Author: Zhou, H.; Institut für Angewandte Physik, Universität Karlsruhe (TH), Wolfgang-Gaede-Str. 1, 76131 Karlsruhe, Germany; email: Huijuan.Zhou@physik.uni-karlsruhe.de
Appears in Collections:Conference Publications [PH]

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