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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/18422
Title: Morphological, optical and electrical properties of γ CuCl deposited by vacuum evaporation
Authors: Lucas F.O.
Mitra, Anirban
McNally P.J.
O'Reilly L.
Daniels S.
Natarajan G.
Durose K.
Proskuryakov Y.Y.
Cameron D.C.
Published in: Journal of Materials Science: Materials in Electronics
Abstract: In this study, we have investigated the microstructural and optical properties of thin films of CuCl grown by vacuum evaporation on amorphous silica glass, polycrystalline indium tin oxide (ITO) and Silicon (100) substrates. Room temperature X-ray diffraction measurements reveal that CuCl grows preferentially with a (111) orientation irrespective of the substrate. Atomic force microscopy measurements showed similar surface topologies and roughness for CuCl/ Si, CuCl/ITO and CuCl/Glass structures. Photoluminescence measurements at 20 K revealed the bound bi-exciton N 1, impurity bound exciton I 1 and the free exciton Z 3occurring at 3.152 ± 0.002 eV, 3.18 eV, and 3.204 eV, respectively, for all three structures. In addition to this, temperature dependent impedance measurements using irreversible electrodes (Au) showed that the deposited CuCl is a mixed ionic and electronic semiconductor with a predominantly extrinsic cationic conduction mechanism at temperatures above ∼280 K and with electronic conduction dominant at temperatures below ∼265 K. © Springer Science+Business Media, LLC 2007.
Citation: Journal of Materials Science: Materials in Electronics, (2008), 99- 101
URI: https://doi.org/10.1007/s10854-007-9309-2
http://repository.iitr.ac.in/handle/123456789/18422
Issue Date: 2008
Keywords: Cationic conduction
Electronic conduction
Photoluminescence measurements
Surface topologies
Atomic force microscopy
Electric properties
Film growth
Morphology
Optical properties
Photoluminescence
Substrates
Surface roughness
Thermal effects
Thin films
Vacuum evaporation
X ray diffraction analysis
Copper compounds
ISSN: 9574522
Author Scopus IDs: 10739690200
57209787039
7102317773
15056648200
8842395600
7004035980
56216953800
6701712241
26643140300
Author Affiliations: Lucas, F.O., Research Institute for Networks and Communications Engineering (RINCE), School of Electronic Engineering, Dublin City University, Dublin 9, Ireland
Mitra, A., Research Institute for Networks and Communications Engineering (RINCE), School of Electronic Engineering, Dublin City University, Dublin 9, Ireland
McNally, P.J., Research Institute for Networks and Communications Engineering (RINCE), School of Electronic Engineering, Dublin City University, Dublin 9, Ireland
O'Reilly, L., Research Institute for Networks and Communications Engineering (RINCE), School of Electronic Engineering, Dublin City University, Dublin 9, Ireland
Daniels, S., Nanomaterials Processing Laboratory, National Centre for Plasma Science and Technology (NCPST), Dublin City University, Dublin 9, Ireland
Natarajan, G., Nanomaterials Processing Laboratory, National Centre for Plasma Science and Technology (NCPST), Dublin City University, Dublin 9, Ireland
Durose, K., Durham Centre for Renewable Energy, Department of Physics, Durham University, South Road, Durham DH1 3LE, United Kingdom
Proskuryakov, Y.Y., Durham Centre for Renewable Energy, Department of Physics, Durham University, South Road, Durham DH1 3LE, United Kingdom
Cameron, D.C., Advanced Surface Technology Research Laboratory (ASTRaL), Lappeenranta University of Technology, P.O. Box 181, Mikkeli 50101, Finland
Funding Details: Acknowledgements We would like to acknowledge the financial support of the Irish Research Council for Science, Engineering and Technology (IRCSET) on this project.
Corresponding Author: Lucas, F.O.; Research Institute for Networks and Communications Engineering (RINCE), School of Electronic Engineering, Dublin City University, Dublin 9, Ireland; email: francis.lucas2@mail.dcu.ie
Appears in Collections:Conference Publications [PH]

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