http://repository.iitr.ac.in/handle/123456789/18422
Title: | Morphological, optical and electrical properties of γ CuCl deposited by vacuum evaporation |
Authors: | Lucas F.O. Mitra, Anirban McNally P.J. O'Reilly L. Daniels S. Natarajan G. Durose K. Proskuryakov Y.Y. Cameron D.C. |
Published in: | Journal of Materials Science: Materials in Electronics |
Abstract: | In this study, we have investigated the microstructural and optical properties of thin films of CuCl grown by vacuum evaporation on amorphous silica glass, polycrystalline indium tin oxide (ITO) and Silicon (100) substrates. Room temperature X-ray diffraction measurements reveal that CuCl grows preferentially with a (111) orientation irrespective of the substrate. Atomic force microscopy measurements showed similar surface topologies and roughness for CuCl/ Si, CuCl/ITO and CuCl/Glass structures. Photoluminescence measurements at 20 K revealed the bound bi-exciton N 1, impurity bound exciton I 1 and the free exciton Z 3occurring at 3.152 ± 0.002 eV, 3.18 eV, and 3.204 eV, respectively, for all three structures. In addition to this, temperature dependent impedance measurements using irreversible electrodes (Au) showed that the deposited CuCl is a mixed ionic and electronic semiconductor with a predominantly extrinsic cationic conduction mechanism at temperatures above ∼280 K and with electronic conduction dominant at temperatures below ∼265 K. © Springer Science+Business Media, LLC 2007. |
Citation: | Journal of Materials Science: Materials in Electronics, (2008), 99- 101 |
URI: | https://doi.org/10.1007/s10854-007-9309-2 http://repository.iitr.ac.in/handle/123456789/18422 |
Issue Date: | 2008 |
Keywords: | Cationic conduction Electronic conduction Photoluminescence measurements Surface topologies Atomic force microscopy Electric properties Film growth Morphology Optical properties Photoluminescence Substrates Surface roughness Thermal effects Thin films Vacuum evaporation X ray diffraction analysis Copper compounds |
ISSN: | 9574522 |
Author Scopus IDs: | 10739690200 57209787039 7102317773 15056648200 8842395600 7004035980 56216953800 6701712241 26643140300 |
Author Affiliations: | Lucas, F.O., Research Institute for Networks and Communications Engineering (RINCE), School of Electronic Engineering, Dublin City University, Dublin 9, Ireland Mitra, A., Research Institute for Networks and Communications Engineering (RINCE), School of Electronic Engineering, Dublin City University, Dublin 9, Ireland McNally, P.J., Research Institute for Networks and Communications Engineering (RINCE), School of Electronic Engineering, Dublin City University, Dublin 9, Ireland O'Reilly, L., Research Institute for Networks and Communications Engineering (RINCE), School of Electronic Engineering, Dublin City University, Dublin 9, Ireland Daniels, S., Nanomaterials Processing Laboratory, National Centre for Plasma Science and Technology (NCPST), Dublin City University, Dublin 9, Ireland Natarajan, G., Nanomaterials Processing Laboratory, National Centre for Plasma Science and Technology (NCPST), Dublin City University, Dublin 9, Ireland Durose, K., Durham Centre for Renewable Energy, Department of Physics, Durham University, South Road, Durham DH1 3LE, United Kingdom Proskuryakov, Y.Y., Durham Centre for Renewable Energy, Department of Physics, Durham University, South Road, Durham DH1 3LE, United Kingdom Cameron, D.C., Advanced Surface Technology Research Laboratory (ASTRaL), Lappeenranta University of Technology, P.O. Box 181, Mikkeli 50101, Finland |
Funding Details: | Acknowledgements We would like to acknowledge the financial support of the Irish Research Council for Science, Engineering and Technology (IRCSET) on this project. |
Corresponding Author: | Lucas, F.O.; Research Institute for Networks and Communications Engineering (RINCE), School of Electronic Engineering, Dublin City University, Dublin 9, Ireland; email: francis.lucas2@mail.dcu.ie |
Appears in Collections: | Conference Publications [PH] |
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