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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/18221
Title: Growth of NiO thin film for p-NiO/n-Si heterojunction UV-Visible photodetector
Authors: Chaoudhary S.
Dewasi A.
Mitra, Anirban
Published in: Proceedings of Optics InfoBase Conference Papers
Abstract: We optimize the oxygen working pressure for pulsed laser deposition of NiO thin films for the fabrication of p-NiO/n-Si photodiode. We show the responsivity ~0.05 for UV illumination and 0.01 A/W in case of visible. © 2019 The Author (s).
Citation: Proceedings of Optics InfoBase Conference Papers, (2019)
URI: https://doi.org/10.1364/FIO.2019.JTu3A.7
http://repository.iitr.ac.in/handle/123456789/18221
Issue Date: 2019
Publisher: OSA - The Optical Society
Keywords: Film growth
Heterojunctions
Nickel oxide
Pulsed laser deposition
Thin films
NiO thin film
Responsivity
UV illuminations
UV-visible
Working pressures
Silicon compounds
ISBN: 9.78156E+12
Author Scopus IDs: 57216748413
57190933816
57209787039
Author Affiliations: Chaoudhary, S., Department of Physics, Indian Institute of Technology, Roorkee, Uttarakhand, 247667, India
Dewasi, A., Department of Physics, Indian Institute of Technology, Roorkee, Uttarakhand, 247667, India
Mitra, A., Department of Physics, Indian Institute of Technology, Roorkee, Uttarakhand, 247667, India
Corresponding Author: Chaoudhary, S.; Department of Physics, Indian Institute of TechnologyIndia; email: savt0107@gmail.com
Appears in Collections:Conference Publications [PH]

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