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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/18169
Title: Controlled growth of single-walled carbon nanotubes for unique nanodevices
Authors: Huang J.
Kim U.
Wang B.
Lahiri, Indranil
Lee E.
Eklund P.C.
Choi W.
Published in: Journal of Nanoscience and Nanotechnology
Abstract: The controlled growth of bent and horizontally aligned single-walled carbon nanotubes (SWNTs) is demonstrated in this study. The bent SWNTs growth is attributed to the interaction between van der Waals force with substrate and aerodynamic force from gas flow. The curvature of bent SWNTs can be tailored by adjusting the angle between gas flow and step-edge direction. Electrical characterization shows that the one-dimensional resistivity of bent SWNTs is correlated with the curvature, which is due to strain induced energy bandgap variation. Additionally, a downshift of 10 cm -1 in G-band is found at curved part by Raman analysis, which may be resulted from the bending induced carbon-carbon bond variation. In addition, horizontally aligned SWNTs and crossbar SWNTs were demonstrated. To prove the possibility of integrating the SWNTs having controllable morphology in carbon nanotube based electronics, an inverter with a gain of 2 was built on an individual horizontally aligned carbon nanotube. Copyright © 2011 American Scientific Publishers All rights reserved.
Citation: Journal of Nanoscience and Nanotechnology, (2011), 262- 269
URI: https://doi.org/10.1166/jnn.2011.3156
http://repository.iitr.ac.in/handle/123456789/18169
Issue Date: 2011
Keywords: Bending
Controlled growth
Electrical property
Horizontally aligned
Inverter
Single-walled carbon nanotube
ISSN: 15334880
Author Scopus IDs: 57199286265
56912885500
57210246827
7004250718
35174445800
22974649600
57202287300
Author Affiliations: Huang, J., Department of Mechanical and Materials Engineering, Florida International University, Miami, FL 33174, United States
Kim, U., Samsung Advanced Institute of Technology (SAIT), Yongin, Gyeonggi-do, 446-712, South Korea
Wang, B., Department of Physics, Pennsylvania State University, University Park, PA 16802, United States
Lahiri, I., Department of Mechanical and Materials Engineering, Florida International University, Miami, FL 33174, United States
Lee, E., Samsung Advanced Institute of Technology (SAIT), Yongin, Gyeonggi-do, 446-712, South Korea
Eklund, P.C., Department of Physics, Pennsylvania State University, University Park, PA 16802, United States, Department of Materials Science and Engineering, Materials Research Institute, Pennsylvania State University, University Park, PA 16802, United States
Choi, W., Department of Mechanical and Materials Engineering, Florida International University, Miami, FL 33174, United States
Corresponding Author: Choi, W.; Department of Mechanical and Materials Engineering, Florida International University, Miami, FL 33174, United States
Appears in Collections:Conference Publications [MT]

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