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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/16726
Title: Fabrication of Molybdenum MEMs Structures Using Dry and Wet Etching
Authors: Chauhan S.S.
J N.
Joglekar, Manish M.
Manhas, Sanjeev Kumar
Rajaram S.
Balamurugan N.B.
Gracia Nirmala Rani D.
Singh V.
Published in: Proceedings of Communications in Computer and Information Science
Abstract: This paper presents a novel method to make molybdenum (Mo) MEMS structures by using both wet and dry etching methods complementing each other to do fabrication in less time by using bulk micromachining process. These planar structures can find a wide range of applications which includes pressure sensors, micro-hotplates owing to the property of Mo to be thermally stable at high temperature, and RF switches due to the mechanical stability of Mo. In the present work, the n-type Si substrate is used on which an oxide layer is grown by thermal oxidation and then high-quality Mo thin film of thickness 900 nm is deposited by DC magnetron sputtering. This paper also describes a very effective method to address the problem of stiction during the releasing process of MEMs structures. The Mo film is characterized by atomic force microscopy (AFM) and X-ray diffraction (XRD) and MEMs structures are characterized by field emission scanning electron microscopy (FE-SEM). © 2019, Springer Nature Singapore Pte Ltd.
Citation: Proceedings of Communications in Computer and Information Science, (2019), 254- 263
URI: https://doi.org/10.1007/978-981-13-5950-7_22
http://repository.iitr.ac.in/handle/123456789/16726
Issue Date: 2019
Publisher: Springer Verlag
Keywords: DC sputtering
Dry etching
MEMs structures
Molybdenum film
Wet etching
ISBN: 9.79E+12
ISSN: 18650929
Author Scopus IDs: 57209807358
57208865026
24332029200
6602269066
Author Affiliations: Chauhan, S.S., Microelectronics Laboratory, Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, India
J, N., Microelectronics Laboratory, Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, India
Joglekar, M.M., Department of Mechanical and Industrial Engineering, Indian Institute of Technology, Roorkee, 247667, India
Manhas, S.K., Microelectronics Laboratory, Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, India
Corresponding Author: J, N.; Microelectronics Laboratory, Department of Electronics and Communication Engineering, Indian Institute of Technology RoorkeeIndia; email: nijgup@gmail.com
Appears in Collections:Conference Publications [ECE]
Conference Publications [ME]

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