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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/16640
Title: Design and characterization of a wideband p-HEMT low noise amplifier
Authors: Kumar A.
Pathak, Nagendra Prasad
Mukherjea S.
Krishnaswamy D.
Mueller P.
Comer D.E.
Mallick B.
Sikora A.
Thampi S.M.
Published in: Proceedings of the 2014 International Conference on Advances in Computing, Communications and Informatics, ICACCI 2014
Abstract: This paper reports a pseudomorphic high electron mobility transistor (HEMT) wide band low noise amplifier (LNA) for WLAN, vehicle communication systems and point to point communication applications. The LNA had been designed by using a single ATF36163 transistor. A wide band bias network has been designed and verified over the desired frequency range. The fabricated prototype of the proposed LNA has a gain of 2.5 dB with a noise figure (NF) of 1.3 dB over the frequency range of 5-6 GHz. The designed amplifier has bandwidth of 1 GHz over the frequency range from 5-6 GHz. © 2014 IEEE.
Citation: Proceedings of the 2014 International Conference on Advances in Computing, Communications and Informatics, ICACCI 2014, (2014), 785- 788
URI: https://doi.org/10.1109/ICACCI.2014.6968527
http://repository.iitr.ac.in/handle/123456789/16640
Issue Date: 2014
Publisher: Institute of Electrical and Electronics Engineers Inc.
Keywords: bias network
gain
matching
noise figure
p-HEMT
wide band
ISBN: 9.78E+12
Author Scopus IDs: 56039523300
7005642176
Author Affiliations: Kumar, A., Radio Frequency Integrated Circuits (RFIC) Laboratory, Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, India
Pathak, N.P., Radio Frequency Integrated Circuits (RFIC) Laboratory, Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, India
Appears in Collections:Conference Publications [ECE]

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