http://repository.iitr.ac.in/handle/123456789/16640| Title: | Design and characterization of a wideband p-HEMT low noise amplifier |
| Authors: | Kumar A. Pathak, Nagendra Prasad Mukherjea S. Krishnaswamy D. Mueller P. Comer D.E. Mallick B. Sikora A. Thampi S.M. |
| Published in: | Proceedings of the 2014 International Conference on Advances in Computing, Communications and Informatics, ICACCI 2014 |
| Abstract: | This paper reports a pseudomorphic high electron mobility transistor (HEMT) wide band low noise amplifier (LNA) for WLAN, vehicle communication systems and point to point communication applications. The LNA had been designed by using a single ATF36163 transistor. A wide band bias network has been designed and verified over the desired frequency range. The fabricated prototype of the proposed LNA has a gain of 2.5 dB with a noise figure (NF) of 1.3 dB over the frequency range of 5-6 GHz. The designed amplifier has bandwidth of 1 GHz over the frequency range from 5-6 GHz. © 2014 IEEE. |
| Citation: | Proceedings of the 2014 International Conference on Advances in Computing, Communications and Informatics, ICACCI 2014, (2014), 785- 788 |
| URI: | https://doi.org/10.1109/ICACCI.2014.6968527 http://repository.iitr.ac.in/handle/123456789/16640 |
| Issue Date: | 2014 |
| Publisher: | Institute of Electrical and Electronics Engineers Inc. |
| Keywords: | bias network gain matching noise figure p-HEMT wide band |
| ISBN: | 9.78E+12 |
| Author Scopus IDs: | 56039523300 7005642176 |
| Author Affiliations: | Kumar, A., Radio Frequency Integrated Circuits (RFIC) Laboratory, Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, India Pathak, N.P., Radio Frequency Integrated Circuits (RFIC) Laboratory, Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, India |
| Appears in Collections: | Conference Publications [ECE] |
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