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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/16523
Title: FinFETs for RF Applications: A Literature review
Authors: Sharma S.M.
Dasgupta S.
Kartikeyan, Machavaram Venkata
Published in: Proceedings of Proc. IEEE Conference on Emerging Devices and Smart Systems, ICEDSS 2018
Abstract: Recent studies on FinFET pointed out the advantage of immunity from short channel effects (SCEs) and their performances at high frequencies need attention. In this paper, we review the potentiality of FinFET structure for high frequency applications. The challenges factors such as capacitance and noise are discussed. The development of analytical model for parasitic capacitance and noise are reviewed. It is necessary for accurate quantitative prediction of the parasitic and noise introduced by each part of the device structure. In addition generalized modeling approach based on artificial neural network is presented which helps in developing model with less computation time. © 2018 IEEE.
Citation: Proceedings of Proc. IEEE Conference on Emerging Devices and Smart Systems, ICEDSS 2018, (2018), 280- 287
URI: https://doi.org/10.1109/ICEDSS.2018.8544355
http://repository.iitr.ac.in/handle/123456789/16523
Issue Date: 2018
Publisher: Institute of Electrical and Electronics Engineers Inc.
Keywords: artificial neural network
FinFET
MOSFET
Multigate Transistor
parasitic capacitance
TCAD
thermal noise
ISBN: 9.78E+12
Author Scopus IDs: 55491666400
19638288800
6603631347
Author Affiliations: Sharma, S.M., Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee, Roorkee, India
Dasgupta, S., Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee, Roorkee, India
Kartikeyan, M.V., Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee, Roorkee, India
Appears in Collections:Conference Publications [ECE]

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