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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/16504
Title: Design strategy for tri-band Doherty power amplifier
Authors: Rawat, Karun
Gowrish B.
Ajmera G.
Kalyan R.
Basu A.
Koul S.
Ghannouchi F.M.
Published in: Proceedings of 2014 IEEE 15th Annual IEEE Wireless and Microwave Technology Conference, WAMICON 2014
Abstract: This paper presents design of a tri-band Doherty power amplifier operating at frequencies of 1.6 GHz, 1.9 GHz and 2.2 GHz. The circuit utilizes two 10 W GaN HEMT transistors in a symmetric Doherty power amplifier configuration. A peak drain efficiency of more than 60% is achieved in measurement at each frequency of operation. At 6 dB output power back-off, the measured drain efficiency is more than 45% at 1.6 GHz, 2.2 GHz and better than 38.2% at 1.9 GHz. In comparison to the balanced mode operation, this corresponds to an improvement of 19.7%, 10.4 % and 16.7% in the drain efficiency achieved at 1.6 GHz, 1.9 GHz and 2.2 GHz respectively. The ratio of Carrier to third order intermodulation distortion is better that 18 dBc at saturation for all three frequencies of operation. © 2014 IEEE.
Citation: Proceedings of 2014 IEEE 15th Annual IEEE Wireless and Microwave Technology Conference, WAMICON 2014, (2014). Tampa, FL
URI: https://doi.org/10.1109/WAMICON.2014.6857788
http://repository.iitr.ac.in/handle/123456789/16504
Issue Date: 2014
Publisher: IEEE Computer Society
Keywords: back-off
Doherty power amplifier
Tri-band
ISBN: 9.78E+12
Author Scopus IDs: 57000644800
56102138700
56323521400
56005046600
56023912300
55849312100
7006217592
Author Affiliations: Rawat, K., Centre for Applied Research in Electronics, Indian Institute of Technology Delhi, New Delhi, India
Gowrish, B., Centre for Applied Research in Electronics, Indian Institute of Technology Delhi, New Delhi, India
Ajmera, G., Centre for Applied Research in Electronics, Indian Institute of Technology Delhi, New Delhi, India
Kalyan, R., Centre for Applied Research in Electronics, Indian Institute of Technology Delhi, New Delhi, India
Basu, A., Centre for Applied Research in Electronics, Indian Institute of Technology Delhi, New Delhi, India
Koul, S., Centre for Applied Research in Electronics, Indian Institute of Technology Delhi, New Delhi, India
Ghannouchi, F.M., Dept. of Electrical and Comp. Engineering, University of Calgary, AB, Canada
Appears in Collections:Conference Publications [ECE]

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