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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/16503
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dc.contributor.authorBarthwal A.-
dc.contributor.authorAjmera G.-
dc.contributor.authorRawat, Karun-
dc.contributor.authorBasu A.-
dc.contributor.authorKoul S.K.-
dc.date.accessioned2020-12-02T14:16:38Z-
dc.date.available2020-12-02T14:16:38Z-
dc.date.issued2014-
dc.identifier.citationProceedings of IEEE MTT-S International Microwave and RF Conference 2014, IMaRC 2014 - Collocated with Intemational Symposium on Microwaves, ISM 2014, (2014), 80- 83-
dc.identifier.isbn9.78E+12-
dc.identifier.urihttps://doi.org/10.1109/IMaRC.2014.7038975-
dc.identifier.urihttp://repository.iitr.ac.in/handle/123456789/16503-
dc.description.abstractThis paper presents the analysis and design of dual-band/three stage Doherty Power Amplifier (DPA). The DPA is implemented using three 10-W packaged GaN-HEMT devices from CREE, with the target of high drain efficiency at 6 and 9-dB output power back-off (OPBO), while operating at 1.7 GHz and 2.4 GHz. At 1.7 GHz, the drain efficiency is better than 51% at both 6 and 9 dB OPBO. The corresponding drain efficiency measured at 2.4 GHz is better than 45.5% for both 6 and 9 dB OPBO. The concurrent operation with simultaneous excitation at 1.7 GHz and 2.4 GHz, results into the aggregated efficiency better than 41% upto 9 dB OPBO. The modulated measurement at 1.7 GHz using one carrier WCDMA signal of 7 dB PAPR shows average efficiency of 53.25% However, with the input excitation of 5 MHz WiMax signal of 7 dB PAPR at 2.4 GHz, the average efficiency is about 51% The designed DPA is linearized using digital predistortion with proper mask qualification for both WCDMA and WiMax signals. © 2014 IEEE.-
dc.description.sponsorshipAstra Microwave Products Ltd. (AMP);AWR ICON Automation Systems;Keysight Technologies;Microwave Vision Group (MVG);National Instruments-
dc.language.isoen_US-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.relation.ispartofProceedings of IEEE MTT-S International Microwave and RF Conference 2014, IMaRC 2014 - Collocated with Intemational Symposium on Microwaves, ISM 2014-
dc.subjectDoherty-
dc.subjectdual-band-
dc.subjectN-stage-
dc.subjectpower amplifiers-
dc.titleDesign scheme for dual-band three stage doherty power amplifiers-
dc.typeConference Paper-
dc.scopusid57025003000-
dc.scopusid56323521400-
dc.scopusid57000644800-
dc.scopusid56023912300-
dc.scopusid55849312100-
dc.affiliationBarthwal, A., Centre for Applied Research in Electronics(C.A.R.E.), Indian Institute of Technology, Delhi, India-
dc.affiliationAjmera, G., Centre for Applied Research in Electronics(C.A.R.E.), Indian Institute of Technology, Delhi, India-
dc.affiliationRawat, K., Centre for Applied Research in Electronics(C.A.R.E.), Indian Institute of Technology, Delhi, India, Bharti School of Telecomm. Technology and Management, Indian Institute of Technology, Delhi, India-
dc.affiliationBasu, A., Centre for Applied Research in Electronics(C.A.R.E.), Indian Institute of Technology, Delhi, India, Bharti School of Telecomm. Technology and Management, Indian Institute of Technology, Delhi, India-
dc.affiliationKoul, S.K., Centre for Applied Research in Electronics(C.A.R.E.), Indian Institute of Technology, Delhi, India, Bharti School of Telecomm. Technology and Management, Indian Institute of Technology, Delhi, India-
dc.identifier.conferencedetails2014 IEEE International Microwave and RF Conference, IMaRC 2014, 15-17 December 2014-
Appears in Collections:Conference Publications [ECE]

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