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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/16495
Title: Wideband tri-stage Doherty Power Amplifier with asymmetric current ratios
Authors: Barthwal A.
Rawat, Karun
Koul S.
Published in: Proceedings of 2016 IEEE MTTS International Microwave and RF Conference, IMaRC 2016
Abstract: This paper presents the analysis and design of wideband tri-stage Doherty Power Amplifier (DPA). The DPA is implemented using three 10-W packaged GaN-HEMT devices from CREE. The measured drain efficiency is more than 50% and 45% over the frequency range of 700MHz to 1000MHz at 6dB and 9.54dB output power back off (OPBO) respectively. The peak drain efficiency is better than 60% over this 300 MHz band. Measurements with 10MHz LTE signal with PAPR of 11.89dB shows the average drain efficiency of 45.7% at average power of 32.04 dBm at 850MHz. The corresponding adjacent channel power ratio is better than-46.27dBc after using digital predistortion algorithm. © 2016 IEEE.
Citation: Proceedings of 2016 IEEE MTTS International Microwave and RF Conference, IMaRC 2016 , (2017)
URI: https://doi.org/10.1109/IMaRC.2016.7939628
http://repository.iitr.ac.in/handle/123456789/16495
Issue Date: 2017
Publisher: Institute of Electrical and Electronics Engineers Inc.
Keywords: Asymmetric current ratio
Doherty power amplifier
Load modulation
Tri-stage
Wideband
ISBN: 9.78E+12
Author Scopus IDs: 57025003000
57000644800
55849312100
Author Affiliations: Barthwal, A., Centre for Applied Research in Electronics (C.A.R.E.), Indian Institute of Technology, Delhi, India
Rawat, K., Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee, India
Koul, S., Centre for Applied Research in Electronics (C.A.R.E.), Indian Institute of Technology, Delhi, India
Appears in Collections:Conference Publications [ECE]

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