http://repository.iitr.ac.in/handle/123456789/16492| Title: | De-embedded model based Class-E power amplifier using waveform engineering |
| Authors: | Kakkad P. Aggrawal E. Rawat, Karun |
| Published in: | Proceedings of 8th International Conference on Computing, Communications and Networking Technologies, ICCCNT 2017 |
| Abstract: | This paper presents waveform engineering based Class-E power amplifier design using simplified GaN HEMT device model. It offers a model based de-embedding approach for predicting extrinsic load impedances at package plane of device. At intrinsic plane of device, voltage and current waveform corresponding to Class-E behavior are maintained during the entire PA design. In order to validate the analysis, a single ended Class-E PA has been designed and fabricated using a CREE10W GaN HEMT 'CGH40010F' transistor. At center frequency of 3.6GHz, the drain efficiency and gain of the power amplifier is measured as 67.42% and 12.04 dB respectively at saturation. © 2017 IEEE. |
| Citation: | Proceedings of 8th International Conference on Computing, Communications and Networking Technologies, ICCCNT 2017, (2017) |
| URI: | https://doi.org/10.1109/ICCCNT.2017.8204012 http://repository.iitr.ac.in/handle/123456789/16492 |
| Issue Date: | 2017 |
| Publisher: | Institute of Electrical and Electronics Engineers Inc. |
| Keywords: | Class E de-embedding GaN HEMT power amplifier waveform engineering |
| ISBN: | 9.78E+12 |
| Author Scopus IDs: | 57200497843 56126169500 57000644800 |
| Author Affiliations: | Kakkad, P., Department of Electronics and Communication, Indian Institute of Technology, Roorkee, India Aggrawal, E., Department of Electronics and Communication, Indian Institute of Technology, Roorkee, India Rawat, K., Department of Electronics and Communication, Indian Institute of Technology, Roorkee, India |
| Appears in Collections: | Conference Publications [ECE] |
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