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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/16492
Title: De-embedded model based Class-E power amplifier using waveform engineering
Authors: Kakkad P.
Aggrawal E.
Rawat, Karun
Published in: Proceedings of 8th International Conference on Computing, Communications and Networking Technologies, ICCCNT 2017
Abstract: This paper presents waveform engineering based Class-E power amplifier design using simplified GaN HEMT device model. It offers a model based de-embedding approach for predicting extrinsic load impedances at package plane of device. At intrinsic plane of device, voltage and current waveform corresponding to Class-E behavior are maintained during the entire PA design. In order to validate the analysis, a single ended Class-E PA has been designed and fabricated using a CREE10W GaN HEMT 'CGH40010F' transistor. At center frequency of 3.6GHz, the drain efficiency and gain of the power amplifier is measured as 67.42% and 12.04 dB respectively at saturation. © 2017 IEEE.
Citation: Proceedings of 8th International Conference on Computing, Communications and Networking Technologies, ICCCNT 2017, (2017)
URI: https://doi.org/10.1109/ICCCNT.2017.8204012
http://repository.iitr.ac.in/handle/123456789/16492
Issue Date: 2017
Publisher: Institute of Electrical and Electronics Engineers Inc.
Keywords: Class E
de-embedding
GaN HEMT
power amplifier
waveform engineering
ISBN: 9.78E+12
Author Scopus IDs: 57200497843
56126169500
57000644800
Author Affiliations: Kakkad, P., Department of Electronics and Communication, Indian Institute of Technology, Roorkee, India
Aggrawal, E., Department of Electronics and Communication, Indian Institute of Technology, Roorkee, India
Rawat, K., Department of Electronics and Communication, Indian Institute of Technology, Roorkee, India
Appears in Collections:Conference Publications [ECE]

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