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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/16444
Title: Optimization of vertical silicon nanowire based solar cell using 3D TCAD simulation
Authors: Kumar J.
Manhas S.K.
Singh D.
Vaddi R.
Published in: Proceedings of 2011 International Symposium on Integrated Circuits, ISIC 2011
Abstract: Solar cells based on nanowire (NW) array has shown promising potential for the low cost photovoltaic because of light absorption and charge carrier transport in this structure are in orthogonal direction to each other. In this study, we report the effect of variation of doping and defect densities on vertical NW solar cell bench-marked with standard planar structure using 3D-TCAD simulation. The performance of NW and planar structure for different amount of defect densities in the structures is investigated. We show that performance of NW solar cell continuously increases with wire doping. The results show that for increased efficiency, a high p-core and n-shell doping densities (∼10 19 cm -3) are needed. This is attributed to radial structure of NW and increased field assisted charge separation. It is found that for same amount of illuminated area, NW structure has 25% higher conversion efficiency. Further it is found that NW radial structure can tolerate defect density as high as 10 18 cm -3, with 82% higher conversion efficiency than planar structure. Our results have significant importance for design of vertical NW based solar cells and applications. © 2011 IEEE.
Citation: Proceedings of 2011 International Symposium on Integrated Circuits, ISIC 2011, (2011), 528- 531. SingaporeSingapore
URI: https://doi.org/10.1109/ISICir.2011.6132013
http://repository.iitr.ac.in/handle/123456789/16444
Issue Date: 2011
Keywords: Built-in field
Cell efficiency
Defect density
Nanowire Solar cell
ISBN: 9781612848648
Author Scopus IDs: 57214276835
6602269066
36912015700
26538319600
Author Affiliations: Kumar, J., Centre of Nanotechnology, Indian Institute of Technology Roorkee, Uttarakhand, 247667, India
Manhas, S.K., Dept. of Electronics and Computer Engineering, Indian Institute of Technology Roorkee, Uttarakhand, 247667, India
Singh, D., Dept. of Electronics and Computer Engineering, Indian Institute of Technology Roorkee, Uttarakhand, 247667, India
Vaddi, R., VIRTUS, School of Electrical and Electronic Engineering, Nanyang, Technological University, 50 Nanyang Avenue, Singapore, Singapore
Corresponding Author: Kumar, J.; Centre of Nanotechnology, Indian Institute of Technology Roorkee, Uttarakhand, 247667, India
Appears in Collections:Conference Publications [ECE]

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