http://repository.iitr.ac.in/handle/123456789/16254| Title: | Investigation of intermediate dielectric for dual floating gate MOSFET |
| Authors: | Sarkar, Biplab Jayanti S. Di Spigna N. Lee B. Misra V. Franzon P. |
| Published in: | Proceedings of 13th Non-Volatile Memory Technology Symposium, NVMTS 2013 |
| Abstract: | A dual floating gate transistor offers potential as a unified memory, with simultaneous volatile and non-volatile storage. The quality of the dielectric between the two floating gates is critical to achieving the required dynamic cycle endurance. This paper reports on the results of early experiments into the material choice and process for this dielectric. © 2013 IEEE. |
| Citation: | Proceedings of 13th Non-Volatile Memory Technology Symposium, NVMTS 2013, (2013). Minneapolis, MN |
| URI: | https://doi.org/10.1109/NVMTS.2013.6851052 http://repository.iitr.ac.in/handle/123456789/16254 |
| Issue Date: | 2013 |
| Publisher: | IEEE Computer Society |
| Keywords: | DRAM endurance EOT flash memory floating gate MIM retention |
| ISBN: | 9.78E+12 |
| Author Scopus IDs: | 57205868869 35770692200 6507948458 12802750500 7201897090 7006752280 |
| Author Affiliations: | Sarkar, B., Department of Electrical Engineering, North Carolina State University, Raleigh, NC 27606, United States Jayanti, S., Department of Electrical Engineering, North Carolina State University, Raleigh, NC 27606, United States Di Spigna, N., Department of Electrical Engineering, North Carolina State University, Raleigh, NC 27606, United States Lee, B., Department of Electrical Engineering, North Carolina State University, Raleigh, NC 27606, United States Misra, V., Department of Electrical Engineering, North Carolina State University, Raleigh, NC 27606, United States Franzon, P., Department of Electrical Engineering, North Carolina State University, Raleigh, NC 27606, United States |
| Appears in Collections: | Conference Publications [ECE] |
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