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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/16250
Title: Material considerations for the development of III-nitride power devices
Authors: Sarkar, Biplab
Reddy P.
Kaess F.
Haidet B.B.
Tweedie J.
Mita S.
Kirste R.
Kohn E.
Collazo R.
Sitar Z.
Ohtani N.
Bakowski M.
Dudley M.
Raghothamachar B.
Shenai K.
Published in: Proceedings of ECS Transactions
Abstract: With advancement in growth of native III-nitride substrates, remarkable progress has been made to extend the functionality of GaN based power electronic devices. The low dislocation epitaxial films grown on native substrates outperforms the films grown on foreign substrates. However, several material considerations has to be incorporated in order to exploit the full potential of GaN and AlxGa1-xN (0<x≤1) based power devices. This paper presents a review report on the development of III-nitride power devices grown on foreign and native (GaN and AlN) substrates. Discussion on state-of-the art epitaxial material quality, contact formation and surface treatments films are presented. © 2017 The Electrochemical Society.
Citation: Proceedings of ECS Transactions, (2017), 29- 36
URI: https://doi.org/10.1149/08007.0029ecst
http://repository.iitr.ac.in/handle/123456789/16250
Issue Date: 2017
Publisher: Electrochemical Society Inc.
Keywords: Aluminum alloys
Aluminum compounds
Aluminum nitride
Electric power systems
Electron devices
Epitaxial growth
Gallium alloys
Gallium compounds
Gallium nitride
Nitrides
Silicon carbide
Substrates
Contact formation
Epitaxial materials
Foreign substrates
GaN based
III-Nitride
On state
Power devices
Power electronic devices
Power semiconductor devices
ISBN: 9.78E+12
ISSN: 19386737
Author Scopus IDs: 57205868869
57200218681
56310683000
56024707600
23487136400
8535369100
24450568300
7102979682
6701729383
7004338257
Author Affiliations: Sarkar, B., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States
Reddy, P., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States, Adroit Materials, 2054 Kildaire Farm Road, Cary, NC 27518, United States
Kaess, F., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States
Haidet, B.B., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States
Tweedie, J., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States, Adroit Materials, 2054 Kildaire Farm Road, Cary, NC 27518, United States
Mita, S., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States, Adroit Materials, 2054 Kildaire Farm Road, Cary, NC 27518, United States
Kirste, R., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States, Adroit Materials, 2054 Kildaire Farm Road, Cary, NC 27518, United States
Kohn, E., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States
Collazo, R., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States
Sitar, Z., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States, Adroit Materials, 2054 Kildaire Farm Road, Cary, NC 27518, United States
Funding Details: We sincerely thank the support from NSF (ECCS-1508854, 1653383, and DMR-1508191) and ARO (W911NF-16-C-0101, W911NF-14-C-0008) for funding this work.
Appears in Collections:Conference Publications [ECE]

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