Effect of dielectric thickness on performance of dual gate organic field effect transistors

Abstract

In this research paper, performance characteristics of the various operating modes of dual gate organic field effect transistors (DG-OFETs) are analyzed Comparative analysis between single-gate and dual-gate OFETs is carried out. Further, effect of gate dielectric thickness (tox) variations ranging from lOOnm to 200nm is investigated. Observations reveal that the electrical characteristics are strongly affected bv the dielectric thickness. It has been observed that the percentage improvement in the current on-off ratio is 95.4% and transconductance is reduced by 40.5% with variation in dielectric thickness. © 2012 IEEE.