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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/15315
Title: Comparative studies of structural and electrical properties of co-doped ZnO thin films prepared by direct current sputtering as a front contact for copper indium gallium di-selenide solar cell
Authors: Gupta C.A.
Mangal S.
Singh U.P.
Published in: Journal of Renewable and Sustainable Energy
Abstract: Doped and co-doped ZnO thin films are currently under intense investigation and development for optoelectronic and solar cell applications. Here in this study Aluminum and Boron (ZAB), Gallium and Boron (ZGB), and Gallium and Aluminum (ZGA) co-doped ZnO thin films were deposited on glass substrate using DC magnetron sputtering at room temperature. A comparative study of the above co-doped ZnO thin films was done on the basis of its structural and electrical properties for solar cell application. All thin films have shown excellent optical properties with more than 80% transmission in the visible range of the light. From the X-ray diffraction patterns, it is found that the films were polycrystalline in nature and the ZAB thin film is more crystalline than the other co-doped ZnO thin films. The surface morphology showed different growth structure of the films. For ZAB and ZGA thin films, the rounded grains were observed and for ZGB thin film some rounded as well as corn type grains were observed. The electrical properties of all the thin films were measured using Hall measurement system at room temperature. For ZGB and ZGA thin films, the resistivity was obtained in the order of 10-3 ohm cm and for ZAB thin film the lowest resistivity of the order of 10-4 ohm cm was obtained which is ideal for transparent conducting oxide thin films to be used as window cum-front contact in multi-junction solar cell such as CIGS solar cell. © 2013 AIP Publishing LLC.
Citation: Journal of Renewable and Sustainable Energy, (2013)
URI: https://doi.org/10.1063/1.4807617
http://repository.iitr.ac.in/handle/123456789/15315
Issue Date: 2013
ISSN: 19417012
Author Scopus IDs: 55788247700
57196977238
57203181883
Author Affiliations: Gupta, C.A., School of Electronics Engineering, KIIT University, Bhubaneswar, Odisha 751024, India
Mangal, S., School of Applied Sciences, KIIT University, Bhubaneswar, Odisha 751024, India
Singh, U.P., School of Electronics Engineering, KIIT University, Bhubaneswar, Odisha 751024, India
Funding Details: This work was supported by research funds of Ministry of New and Renewable Energy (MNRE) and Defence Research and Development Organization (DRDO), New Delhi, India. Table I. Particle size and band gap values of ZAB, ZGB, and ZGA films. Sample name FWHM (°) Crystallite size (nm) Band gap (eV) ZAB 0.6 13.48 3.15 ZGB 0.7 11.53 2.96 ZGA 0.68 11.89 3.1 Table II. Hall effect measurement values of ZAB, ZGB, and ZGA films. Sample name Carrier concentration (cm −3 ) Mobility (cm 2 /V s) Resistivity (ohm cm) ZAB 9.1 × 10 20 12.33 5.56 × 10 −4 ZGB 8.29 × 10 20 7.38 1.02 × 10 −3 ZGA 6.99 × 10 20 4.13 2.16 × 10 −3 FIG. 1. Transmittance and band gap plots of ZAB, ZGB, and ZGA films. FIG. 2. XRD plot of ZAB, ZGB, and ZGA films. FIG. 3. SEM image of ZAB film. FIG. 4. SEM image of ZGB film. FIG. 5. SEM image of ZGA film.
Corresponding Author: Singh, U.P.; School of Electronics Engineering, KIIT University, Bhubaneswar, Odisha 751024, India; email: singhup@kiit.ac.in
Appears in Collections:Conference Publications [CY]

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