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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/15307
Title: A Comparative study of kesterite thin films prepared from different ball milled precursors
Authors: Pani B.
Padhy S.
Singh U.P.
Published in: Proceedings of Materials Today
Abstract: Understanding the role of chalcogens (S & Se) is critical and challenging due to complex nature of kesterite compounds. Kesterite structure based CZTS/Se (Cu2ZnSnS/Se4) thin films were prepared from Cu-Zn-Sn-S, Cu-Zn-Sn-Se and Cu-Zn-Sn-S-Se precursors by subsequent selenization. This study compared the CZTSSe (Cu2ZnSn(S,Se)4) films prepared by the selenization of S and (S+Se) containing precursors. Pure Se based CZTSe (Cu2ZnSnSe4) film was also prepared from Cu-Zn-Sn-Se precursor. The properties of precursor powders were studied by means of XRD, TG-DSC and TEM. Phase formation of the three ball milled precursor (S, Se & S+Se) and thermal behavior was found to be significantly different. Compactness and grain growth were found better in case of film formed by selenization of Se & (S+Se) containing precursors. The impact of different chalcogen sources of precursors reflected in the structure, morphology, composition and band gap values of films. The present study offers new insight into the role of different chalcogen sources in the precursor, on the films prepared. Interesting aspects of structure, morphology and composition were explored for the precursors and the films. Various micro structural parameters such as strain & dislocation density along with penetration depth were calculated from XRD plots & are discussed. © 2017 Elsevier Ltd.
Citation: Proceedings of Materials Today, (2017), 12536- 12544
URI: https://doi.org/10.1016/j.matpr.2017.10.057
http://repository.iitr.ac.in/handle/123456789/15307
Issue Date: 2017
Publisher: Elsevier Ltd
Keywords: Alloys
Annealing
Electron microscopy
Semiconductors
Thin films
ISSN: 22147853
Author Scopus IDs: 55925565000
57202310940
57203181883
Author Affiliations: Pani, B., School of Applied Sciences, KIIT University, Bhubaneswar, 751024, India
Padhy, S., Moserbaer India Ltd., Greater Noida (U.P.), India
Singh, U.P., School of Electronics Engineering, KIIT University, Bhubaneswar, 751024, India
Funding Details: This work is supported by the project #DST/TM/SERI/2K11/42 funded by Department of Science and Technology (DST), New Delhi. The Authors would like to thank Dr. N. B. Chaure, (University of Pune) for TEM characterization. The authors are also thankful to Prof. K. T. Ramakrishna Reddy (S. V. University, Tirupati) for his support with Raman scattering measurements.
Corresponding Author: Singh, U.P.; School of Electronics Engineering, KIIT UniversityIndia; email: singhup@kiit.ac.in
Appears in Collections:Conference Publications [CY]

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