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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/14528
Title: Temperature tuned defect induced magnetism in reduced graphene oxide
Authors: Khurana G.
Kumar N.
Kotnala R.K.
Nautiyal, Tashi
Katiyar R.S.
Published in: Nanoscale
Abstract: The existence of ferromagnetism in the wonder material graphene has opened up the path for many future spintronics and memory applications. But simultaneously it is very important to understand the variation of these properties with temperature in regards to the device applications. Here we observed defect induced ferromagnetism in chemically reduced graphene and the effect of temperature on it. Several theoretical studies have proved that the main cause of ferromagnetism in graphene is due to various defects. The observed results established that these defects can be mended by treating the samples at elevated temperatures but sacrificing the ferromagnetism simultaneously. Hence, temperature plays a crucial role in controlling the magnetism as well as the defects in graphene. In this study we revealed that at 600°C the self-repair mechanism helps the defects to mend but resulting in the decrement of magnetization and providing a good quality graphene with less defects. © The Royal Society of Chemistry 2013.
Citation: Nanoscale (2013), 5(8): 3346-3351
URI: https://doi.org/10.1039/c3nr34291c
http://repository.iitr.ac.in/handle/123456789/14528
Issue Date: 2013
ISSN: 20403364
Author Scopus IDs: 55194090900
55391508400
6602954113
6602903861
35468188700
Author Affiliations: Khurana, G., Department of Physics, University of Puerto Rico, San Juan 00931-3343, Puerto Rico
Kumar, N., National Physical Laboratory, Dr K.S. Krishnan Marg, New Delhi 110012, India, Department of Physics, National Institute of Technology, Kurukshetra 136119, India
Kotnala, R.K., National Physical Laboratory, Dr K.S. Krishnan Marg, New Delhi 110012, India
Nautiyal, T., Department of Physics, Indian Institute of Technology, Roorkee 247667, India
Katiyar, R.S., Department of Physics, University of Puerto Rico, San Juan 00931-3343, Puerto Rico
Corresponding Author: Khurana, G.; Department of Physics, University of Puerto Rico, San Juan 00931-3343, Puerto Rico; email: geetkhurana84@gmail.com
Appears in Collections:Journal Publications [PH]

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