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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/14323
Title: Room-temperature ultraviolet luminescence from γ-CuCl grown on near lattice-matched silicon
Authors: O'Reilly L.
Lucas O.F.
McNally P.J.
Reader A.
Natarajan G.
Daniels S.
Cameron D.C.
Mitra, Anirban
Martinez-Rosas M.
Bradley A.L.
Published in: Journal of Applied Physics
Abstract: We have probed the luminescence properties of a wide-band-gap, direct band-gap optoelectronic material, grown on closely lattice-matched silicon substrates, namely, γ-CuCl on Si. This material system is compatible with current Si or GaAs-based electronic/optoelectronic technologies. Polycrystalline epitaxy of CuCl can be controlled such that it maintains an orientation similar to the underlying Si substrate. Importantly, chemical interactions between CuCl and Si are eliminated. Photoluminescence and cathodoluminescence results for CuCl, deposited on either Si (100) or Si (111), reveal a strong room-temperature Z3 excitonic emission at ∼387 nm. We have developed and demonstrated the room-temperature operation of an ultraviolet electroluminescent device fabricated by the growth of γ-CuCl on Si. The application of an electrical potential difference across the device results in an electric field, which promotes light emission through hot-electron impact excitation of electron-hole pairs in the γ-CuCl. Since the excitonic binding energy in this direct band-gap material is of the order of 190 meV at room temperature, the electron-hole recombination and subsequent light emission at ∼380 and ∼387 nm are mediated by excitonic effects. © 2005 American Institute of Physics.
Citation: Journal of Applied Physics (2005), 98(11): -
URI: https://doi.org/10.1063/1.2138799
http://repository.iitr.ac.in/handle/123456789/14323
Issue Date: 2005
ISSN: 218979
Author Scopus IDs: 15056648200
9044337800
7102317773
7005446774
7004035980
8842395600
26643140300
57209787039
10143530500
35756512900
Author Affiliations: O'Reilly, L., Nanomaterials Processing Laboratory, School of Electronic Engineering, Dublin City University, Dublin 9, Ireland
Lucas, O.F., Nanomaterials Processing Laboratory, School of Electronic Engineering, Dublin City University, Dublin 9, Ireland
McNally, P.J., Nanomaterials Processing Laboratory, School of Electronic Engineering, Dublin City University, Dublin 9, Ireland
Reader, A., Nanomaterials Processing Laboratory, School of Electronic Engineering, Dublin City University, Dublin 9, Ireland, Innos Ltd., Faculty of Electronics and Computing, University of Southampton, Highfield, Southampton SO17 1BJ, United Kingdom
Natarajan, G., Nanomaterials Processing Laboratory, School of Electronic Engineering, Dublin City University, Dublin 9, Ireland
Daniels, S., Nanomaterials Processing Laboratory, School of Electronic Engineering, Dublin City University, Dublin 9, Ireland
Cameron, D.C., Nanomaterials Processing Laboratory, School of Electronic Engineering, Dublin City University, Dublin 9, Ireland, Advanced Surface Technology Research Laboratory (ASTRaL), Lappeenranta University of Technology, P.O. Box 181, 50101 Mikkeli, Finland
Mitra, A., Semiconductor Photonics, Physics Department, Trinity College, Dublin 2, Ireland
Martinez-Rosas, M., Semiconductor Photonics, Physics Department, Trinity College, Dublin 2, Ireland, Universidad Autónoma de Baja California, Ensenada, Mexico
Bradley, A.L., Semiconductor Photonics, Physics Department, Trinity College, Dublin 2, Ireland
Funding Details: This project is funded by the Irish Research Council for Science Engineering and Technology (IRCSET) Grant No. SC/02/7.
Corresponding Author: O'Reilly, L.; Nanomaterials Processing Laboratory, School of Electronic Engineering, Dublin City University, Dublin 9, Ireland; email: oreillyl@eeng.dcu.ie
Appears in Collections:Journal Publications [PH]

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