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dc.contributor.authorAcharya S.-
dc.contributor.authorDey D.-
dc.contributor.authorMaitra, Tulika-
dc.contributor.authorSoni A.-
dc.contributor.authorTaraphder A.-
dc.date.accessioned2020-10-15T12:38:02Z-
dc.date.available2020-10-15T12:38:02Z-
dc.date.issued2018-
dc.identifier.citationApplied Physics Letters (2018), 113(19): --
dc.identifier.issn36951-
dc.identifier.urihttps://doi.org/10.1063/1.5055250-
dc.identifier.urihttp://repository.iitr.ac.in/handle/123456789/14292-
dc.description.abstractThermoelectric performance of SnTe has been found to enhance with isovalent doping of alkaline and transition metal elements where most of these elements have a solubility of less than 13%. We propose a strategy of doping rare earth element Yb to enhance the thermoelectric performance of SnTe. With heavy atomic mass and strong spin-orbit coupling, even the mild doping of Yb (∼5%) is enough to create a degeneracy via band-convergence which enhances the density of states near the Fermi level and improves the overall performance. Our transport data and first-principles calculations corroborate that nearly 5% Yb is an efficient dopant to achieve thermoelectric response which is equivalent to 9% of Mn doping. The results are useful for understanding the environmentally friendly thermoelectric SnTe. © 2018 Author(s).-
dc.language.isoen_US-
dc.publisherAmerican Institute of Physics Inc.-
dc.relation.ispartofApplied Physics Letters-
dc.titleRare earth doping and effective band-convergence in SnTe for improved thermoelectric performance-
dc.typeArticle-
dc.scopusid57191415063-
dc.scopusid57189329600-
dc.scopusid7004183343-
dc.scopusid8140351300-
dc.scopusid6602698909-
dc.affiliationAcharya, S., School of Basic Sciences, Indian Institute of Technology, Mandi, HP, 175005, India-
dc.affiliationDey, D., Department of Physics and Centre for Theoretical Studies, Indian Institute of Technology, Kharagpur WB, 721302, India-
dc.affiliationMaitra, T., Department of Physics, Indian Institute of Technology, Roorkee, UK, 247667, India-
dc.affiliationSoni, A., School of Basic Sciences, Indian Institute of Technology, Mandi, HP, 175005, India-
dc.affiliationTaraphder, A., School of Basic Sciences, Indian Institute of Technology, Mandi, HP, 175005, India, Department of Physics and Centre for Theoretical Studies, Indian Institute of Technology, Kharagpur WB, 721302, India-
dc.description.fundingAS gratefully acknowledges the Board of Research in Nuclear Sciences, India, for young scientist research award [37(3)/14/02/2015/BRNS] and Indian Institute of Technology Mandi for research facilities. DD acknowledges the Department of Science and Technology (DST), India, for INSPIRE research fellowship.-
dc.description.correspondingauthorSoni, A.; School of Basic Sciences, Indian Institute of TechnologyIndia; email: ajay@iitmandi.ac.in-
Appears in Collections:Journal Publications [PH]

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