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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/14116
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dc.contributor.authorRani J.-
dc.contributor.authorYadav, Kamlesh Kumar-
dc.contributor.authorPrakash S.-
dc.date.accessioned2020-10-15T12:36:57Z-
dc.date.available2020-10-15T12:36:57Z-
dc.date.issued2012-
dc.identifier.citationApplied Physics A: Materials Science and Processing (2012), 108(3): 761-764-
dc.identifier.issn9478396-
dc.identifier.urihttps://doi.org/10.1007/s00339-012-6970-y-
dc.identifier.urihttp://repository.iitr.ac.in/handle/123456789/14116-
dc.description.abstractLead free (1-x)(K 0.5Na 0.5)NbO 3-x(Ba 0.9Sr 0.1)(Zr 0.1Ti 0.9)O 3 [(1-x)KNN-xBSZT] (x=0,0.02,0.04 and 0.06) ceramic were synthesized by a solid-state reaction method and the effects of BSZT doping on the electrical properties of KNN have been studied. X-ray diffraction (XRD) indicates that all the samples have single-phase perovskite structure and addition of BSZT forms a morphotropic phase boundary (MPB) i.e. the coexistence of orthorhombic and tetragonal phase in the region 0.02≤x≤0.04. Field emission scanning electron microscopy (FESEM) indicates the reduction in the grain size with the addition of BSZT. Small broadening in the dielectric peak arises at higher concentration of BSZT. The value of remnant polarization at x=0.04 is found to be higher than any other value of x except x=0 and also results in enhancement of dielectric constant at room temperature. Thereby it makes it useful for application at room temperature. © 2012 Springer-Verlag.-
dc.language.isoen_US-
dc.relation.ispartofApplied Physics A: Materials Science and Processing-
dc.titleModified structure and electrical properties of BSZT doped KNN hybrid ceramic-
dc.typeArticle-
dc.scopusid54387571600-
dc.scopusid7005825645-
dc.scopusid36830433000-
dc.affiliationRani, J., Smart Materials Research Laboratory, Department of Physics, Indian Institute of Technology Roorkee, Roorkee 247667, India-
dc.affiliationYadav, K.L., Smart Materials Research Laboratory, Department of Physics, Indian Institute of Technology Roorkee, Roorkee 247667, India-
dc.affiliationPrakash, S., Metallurgical and Materials Engineering Department, Indian Institute of Technology Roorkee, Roorkee 247667, India-
dc.description.correspondingauthorYadav, K.L.; Smart Materials Research Laboratory, Department of Physics, Indian Institute of Technology Roorkee, Roorkee 247667, India; email: klyadav35@yahoo.com-
Appears in Collections:Journal Publications [PH]

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