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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/14095
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dc.contributor.authorKaur, Davinder-
dc.contributor.authorRao K.V.-
dc.date.accessioned2020-10-15T12:36:51Z-
dc.date.available2020-10-15T12:36:51Z-
dc.date.issued2003-
dc.identifier.citationJournal of Physics D: Applied Physics (2003), 36(): 156-159-
dc.identifier.issn223727-
dc.identifier.urihttps://doi.org/10.1088/0022-3727/36/2/313-
dc.identifier.urihttp://repository.iitr.ac.in/handle/123456789/14095-
dc.description.abstractHighly conductive BaRuO3 thin films have been grown heteroepitaxially on (100) LaAlO3 substrate using pulsed laser deposition technique over temperature range varying from 600°C to 775°C. Atomic force microscopy, scanning tunneling microscopy and x-ray di-
dc.language.isoen_US-
dc.relation.ispartofJournal of Physics D: Applied Physics-
dc.titleMetal-Insulator transition in BaRuO3 thin films-
dc.typeArticle-
dc.scopusid7004805387-
dc.scopusid7404811175-
dc.affiliationKaur, D., Department of Physics, Indian Institute of Technology, Roorkee, India-
dc.affiliationRao, K.V., Dept. of Condensed Matter Physics, Royal Institute of Technology, S-100 44, Stockholm, Sweden-
dc.description.correspondingauthorKaur, D.; Department of Physics, Indian Institute of Technology, Roorkee, India-
Appears in Collections:Journal Publications [PH]

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