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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/13957
Title: Impact on structural, optical and electrical properties of CuCl by incorporation of Zn for n-type doping
Authors: O'Reilly L.
Mitra, Anirban
Natarajan G.
Lucas O.F.
McNally P.J.
Daniels S.
Cameron D.C.
Bradley A.L.
Reader A.
Lau S.
Yu S.
Yi G.
Kawasaki M.
Published in: Journal of Crystal Growth
Abstract: γ-CuCl is a wide-band gap (Eg=3.395eV at 4 K), direct band gap, semiconductor material with a cubic zincblende lattice structure. A very large exciton binding energy (190 meV), assures efficient exciton-based emission at room temperature. Its lattice constant, aCuCl=0.541nm means that the lattice mismatch to Si (aSi=0.543nm) is <0.5%. γ-CuCl on Si - the growth of a wide-band gap, direct band gap, optoelectronics material on silicon substrate is a novel material system, with compatibility to current Si-based electronic/optoelectronics technologies. Both n-type and p-type CuCl will be required for development of homojunction light-emitting diodes (LEDs). The authors report on the impact of incorporation of Zn for n-type doping of CuCl by co-evaporation of CuCl and ZnCl2. Polycrystalline Zn-doped γ-CuCl thin films are grown on Si (1 1 1), Si (1 0 0), and glass substrates by physical vapour deposition. X-ray diffraction (XRD) studies confirm that this n-doped CuCl has a cubic zincblende structure with a preferred (1 1 1) orientation. Several excitonic bands are evident in low-temperature photoluminescence (PL) measurements such as the Z3 free exciton at ∼388 nm; I1-bound exciton at ∼392 nm and M free biexciton at ∼393 nm. Cathodoluminescence (CL) and PL reveal a strong room temperature Z3 excitonic emission at ∼385 nm. Electrical measurements indicate n-type conductivity with resistivity ∼34 Ωcm. © 2005 Elsevier B.V. All rights reserved.
Citation: Journal of Crystal Growth (2006), 287(1): 139-144
URI: https://doi.org/10.1016/j.jcrysgro.2005.10.057
http://repository.iitr.ac.in/handle/123456789/13957
Issue Date: 2006
Keywords: A1. Doping
A1. X-ray diffraction
B1. CuCl
B2. Wide-band gap semiconductor
ISSN: 220248
Author Scopus IDs: 15056648200
57209787039
7004035980
9044337800
7102317773
8842395600
26643140300
35756512900
7005446774
Author Affiliations: O'Reilly, L., Nanomaterials Processing Laboratory, School of Electronic Engineering, Dublin City University, Dublin 9, Ireland
Mitra, A., Semiconductor Photonics, Physics Department, Trinity College, Dublin 2, Ireland
Natarajan, G., Nanomaterials Processing Laboratory, School of Electronic Engineering, Dublin City University, Dublin 9, Ireland
Lucas, O.F., Nanomaterials Processing Laboratory, School of Electronic Engineering, Dublin City University, Dublin 9, Ireland
McNally, P.J., Nanomaterials Processing Laboratory, School of Electronic Engineering, Dublin City University, Dublin 9, Ireland
Daniels, S., Nanomaterials Processing Laboratory, School of Electronic Engineering, Dublin City University, Dublin 9, Ireland
Cameron, D.C., Nanomaterials Processing Laboratory, School of Electronic Engineering, Dublin City University, Dublin 9, Ireland, Advanced Surface Technology Research Laboratory (ASTRaL), Lappeenranta University of Technology, PO BOX 181, 50101 Mikkeli, Finland
Bradley, A.L., Semiconductor Photonics, Physics Department, Trinity College, Dublin 2, Ireland
Reader, A., Nanomaterials Processing Laboratory, School of Electronic Engineering, Dublin City University, Dublin 9, Ireland, Innos Ltd., Faculty of Electronics and Computing, University of Southampton, Highfield, Southampton, SO17 IBJ, United Kingdom
Funding Details: This project is supported by the Irish Research Council for Science Engineering and Technology, IRCSET Basic Research Grant SC/2002/7.
Corresponding Author: O'Reilly, L.; Nanomaterials Processing Laboratory, School of Electronic Engineering, Dublin City University, Dublin 9, Ireland; email: oreillyl@eeng.dcu.ie
Appears in Collections:Journal Publications [PH]

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