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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/13907
Title: Growth of CuCI thin films by magnetron sputtering for ultraviolet optoelectronic applications
Authors: Natarajan G.
Daniels S.
Cameron D.C.
O'Reilly L.
Mitra, Anirban
McNally P.J.
Lucas O.F.
Kumar R.T.R.
Reid I.
Bradley A.L.
Published in: Journal of Applied Physics
Abstract: Copper (I) chloride (CuCl) is a potential candidate for ultraviolet (UV) optoelectronics due to its close lattice match with Si (mismatch less than 0.4%) and a high UV excitonic emission at room temperature. CuCl thin films were deposited using radio frequency magnetron sputtering technique. The influence of target to substrate distance (dts) and sputtering pressure on the composition, microstructure, and UV emission properties of the films were analyzed. The films deposited with shorter target to substrate spacing (d ts=3 cm) were found to be nonstoichiometric, and the film stoichiometry improves when the substrate is moved away from the target (d ts=4.5 and 6 cm). A further increase in the spacing results in poor crystalline quality. The grain interface area increases when the sputtering pressure is increased from 1.1 × 10-3 to 1 × 10 -2 mbar at dts=6 cm. Room temperature cathodoluminescence spectrum shows an intense and sharp UV exciton (Z3) emission at ∼385 nm with a full width at half maximum of 16 nm for the films deposited at the optimum dts of 6 cm and a pressure of 1.1 × 10-3 mbar. A broad deep level emission in the green region ( ∼515 nm) is also observed. The relative intensity of the UV to green emission peaks decreased when the sputtering pressure was increased, consistent with an increase in grain boundary area. The variation in the stoichiometry and the crystallinity are attributed to the change in the intensity and energy of the flux of materials from the target due to the interaction with the background gas molecules. © 2006 American Institute of Physics.
Citation: Journal of Applied Physics (2006), 100(3): -
URI: https://doi.org/10.1063/1.2227261
http://repository.iitr.ac.in/handle/123456789/13907
Issue Date: 2006
ISSN: 218979
Author Scopus IDs: 7004035980
8842395600
26643140300
15056648200
57209787039
7102317773
9044337800
55492123700
57196746973
35756512900
Author Affiliations: Natarajan, G., Nanomaterials Processing Laboratory (NPL), NCPST, Dublin City University, Dublin-9, Ireland
Daniels, S., Nanomaterials Processing Laboratory (NPL), NCPST, Dublin City University, Dublin-9, Ireland
Cameron, D.C., Advanced Surface Technology Research Laboratory (ASTRaL), Lappeenranta University of Technology, 50101 Mikkeli, Finland
O'Reilly, L., Nanomaterials Processing Laboratory (NPL), RINCE, Dublin City University, Dublin-9, Ireland
Mitra, A., Nanomaterials Processing Laboratory (NPL), RINCE, Dublin City University, Dublin-9, Ireland
McNally, P.J., Nanomaterials Processing Laboratory (NPL), RINCE, Dublin City University, Dublin-9, Ireland
Lucas, O.F., Nanomaterials Processing Laboratory (NPL), RINCE, Dublin City University, Dublin-9, Ireland
Kumar, R.T.R., School of Physical Sciences, Dublin City University, Dublin-9, Ireland
Reid, I., School of Physical Sciences, Dublin City University, Dublin-9, Ireland
Bradley, A.L., Semiconductor Photonics Group, Physics Department, Trinity College, Dublin 2, Ireland
Funding Details: This project is funded by the Irish Research Council for Science Engineering and Technology (IRCSET) Grant No. SC/02/7. The authors would like to thank Billy Roarty for his technical support.
Corresponding Author: Natarajan, G.; Nanomaterials Processing Laboratory (NPL), NCPST, Dublin City University, Dublin-9, Ireland; email: gomathi.natarajan@mail.dcu.ie
Appears in Collections:Journal Publications [PH]

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