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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/13814
Title: Evaluation of the chemical, electronic and optoelectronic properties of γ-CuCl thin films and their fabrication on Si substrates
Authors: Lucas F.O.
Mitra, Anirban
McNally P.J.
Daniels S.
Bradley A.L.
Taylor D.M.
Proskuryakov Y.Y.
Durose K.
Cameron D.C.
Published in: Journal of Physics D: Applied Physics
Abstract: CuCl is a I-VII semiconductor material with a direct band gap of ∼3.4 eV. It exhibits a zincblende structure (γ-phase) at low temperatures, up to ∼680 K. Unlike GaN, ZnO and related materials, CuCl has a relatively low lattice mismatch with Si (<0.4%) and a large excitonic binding energy (∼190 meV). This suggests the possibility of the fabrication of excitonic-based blue/UV optoelectronic devices on Si with relatively low threading dislocation densities. In this study, CuCl has been deposited and examined as a candidate material for the fabrication of these devices. X-ray diffraction (XRD) measurements confirmed that the deposited films were preferentially oriented in the (1 1 1) plane. Room temperature photoluminescence measurements reveal a strong Z3 free exciton peak (3.232 eV). Both steady state dc and ac impedance spectroscopy experiments suggested that the deposited CuCl is a mixed ionic-electronic semiconductor material. An electronic conductivity of the order of 2.3 × 10-7 S cm-1 was deduced to be in coexistence with Cu+ ionic conductivity using irreversible electrodes (Au), while a total conductivity of the order of 6.5 × 10-7 S cm-1 was obtained using reversible electrodes (Cu) at room temperature. Further to this, we have identified some of the challenges in fabricating an optoelectronic device based on a CuCl/Si hybrid platform and propose some possible solutions. © 2007 IOP Publishing Ltd.
Citation: Journal of Physics D: Applied Physics (2007), 40(11): 3461-3467
URI: https://doi.org/10.1088/0022-3727/40/11/030
http://repository.iitr.ac.in/handle/123456789/13814
Issue Date: 2007
ISSN: 223727
Author Scopus IDs: 10739690200
57209787039
7102317773
8842395600
35756512900
56613628500
6701712241
56216953800
26643140300
Author Affiliations: Lucas, F.O., Nanomaterials Processing Laboratory, School of Electronic Engineering, Dublin City University, Dublin 9, Ireland
Mitra, A., Nanomaterials Processing Laboratory, School of Electronic Engineering, Dublin City University, Dublin 9, Ireland
McNally, P.J., Nanomaterials Processing Laboratory, School of Electronic Engineering, Dublin City University, Dublin 9, Ireland
Daniels, S., Nanomaterials Processing Laboratory, School of Electronic Engineering, Dublin City University, Dublin 9, Ireland
Bradley, A.L., Semiconductor Photonics Group, Physics Department, Trinity College, Dublin 2, Ireland
Taylor, D.M., Polymer Electronics Research Group, School of Electronic Engineering, University of Wales, Bangor, Gwynedd, LL57 1UT, United Kingdom
Proskuryakov, Y.Y., Durham Centre for Renewable Energy, Department of Physics, Durham University, South Road, Durham, DH1 3LE, United Kingdom
Durose, K., Durham Centre for Renewable Energy, Department of Physics, Durham University, South Road, Durham, DH1 3LE, United Kingdom
Cameron, D.C., Advanced Surface Technology Research Laboratory (ASTRaL), Lappeenranta University of Technology, PO Box 181, Mikkeli 50101, Finland
Corresponding Author: Lucas, F.O.; Nanomaterials Processing Laboratory, School of Electronic Engineering, Dublin City University, Dublin 9, Ireland; email: olalucas@eeng.dcu.ie
Appears in Collections:Journal Publications [PH]

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