Skip navigation
Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/13740
Title: Electrical and structural characteristics of sputtered c-oriented AlN thin films on Si (100) and Si (110) substrates
Authors: Pey A.
Kaushik J.
Dutta S.
Kapoor A.K.
Kaur, Davinder
Published in: Thin Solid Films
Abstract: This paper discussed about the morphological and electrical properties of c-axis oriented aluminium nitride (AlN) thin films grown on Si (100) and Si (110) substrates by direct current (DC) reactive sputtering technique. Both the films showed intense (002
Citation: Thin Solid Films (2018), 666(): 143-149
URI: https://doi.org/10.1016/j.tsf.2018.09.016
http://repository.iitr.ac.in/handle/123456789/13740
Issue Date: 2018
Publisher: Elsevier B.V.
Keywords: Aluminium nitride
Dielectric constant
Metal-insulator-semiconductor structure
Morphology
Trapped charges
ISSN: 406090
Author Scopus IDs: 35355067700
55550373500
50461340300
57206382684
7004805387
Author Affiliations: Pandey, A., Solid State Physics Laboratory, DRDO, Lucknow Road, Timarpur, Delhi 110054, India, Department of Physics and Centre for Nanotechnology, Indian Institute of Technology Roorkee, Roorkee, 247667, India
Kaushik, J., Solid State Physics Laborator
Appears in Collections:Journal Publications [PH]

Files in This Item:
There are no files associated with this item.
Show full item record


Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.