Skip navigation
Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/13710
Title: Effect of selective doping on the spatial dispersion of donor-induced quantum dots in Si nanoscale transistors
Authors: Tyszka K.
Moraru D.
Samanta A.
Mizuno T.
Jabłoński R.
Tabe M.
Published in: Applied Physics Express
Abstract: In donor-atom Si transistors, donor-induced potential minima work as quantum dots (QDs) giving rise to single-electron tunneling peaks at low temperatures. Until now, however, current-voltage (I-V) characteristics have not been directly correlated with measured donor-induced potentials. For that, we study the spatial dispersion of potential minima by Kelvin probe force microscopy combined with potential simulations and electrical characteristics. As a result, for low doping concentrations, current peaks are ascribed to spatially scattered QDs, whereas for high doping cocentrations with a selective doping pattern, peaks are ascribed to donor-cluster QDs located at less-scattered centralized position due to a macroscopic U-shaped potential, suggesting a way for QD position control. © 2015 The Japan Society of Applied Physics.
Citation: Applied Physics Express (2015), 8(9): -
URI: https://doi.org/10.7567/APEX.8.094202
http://repository.iitr.ac.in/handle/123456789/13710
Issue Date: 2015
Publisher: Japan Society of Applied Physics
ISSN: 18820778
Author Scopus IDs: 25622621100
55995849900
56294229500
56355314800
7006239723
7005586633
Author Affiliations: Tyszka, K., Research Institute of Electronics, Shizuoka University, Hamamatsu, 432-8011, Japan, Institute of Metrology and Biomedical Engineering, Warsaw University of Technology, S w. A. Boboli 8, Warsaw, 02-525, Poland
Moraru, D., Faculty of Engineering, Shizuoka University, Hamamatsu, 432-8011, Japan
Samanta, A., Research Institute of Electronics, Shizuoka University, Hamamatsu, 432-8011, Japan
Mizuno, T., Research Institute of Electronics, Shizuoka University, Hamamatsu, 432-8011, Japan
Jabłoński, R., Institute of Metrology and Biomedical Engineering, Warsaw University of Technology, S w. A. Boboli 8, Warsaw, 02-525, Poland
Tabe, M., Research Institute of Electronics, Shizuoka University, Hamamatsu, 432-8011, Japan
Corresponding Author: Tabe, M.; Research Institute of Electronics, Shizuoka UniversityJapan
Appears in Collections:Journal Publications [PH]

Files in This Item:
There are no files associated with this item.
Show full item record


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.