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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/13659
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dc.contributor.authorPey A.-
dc.contributor.authorYadav B.S.-
dc.contributor.authorRao D.V.S.-
dc.contributor.authorKaur, Davinder-
dc.contributor.authorKapoor A.K.-
dc.date.accessioned2020-10-15T12:34:56Z-
dc.date.available2020-10-15T12:34:56Z-
dc.date.issued2016-
dc.identifier.citationApplied Physics A: Materials Science and Processing (2016), 122(6): --
dc.identifier.issn9478396-
dc.identifier.urihttps://doi.org/10.1007/s00339-016-0143-3-
dc.identifier.urihttp://repository.iitr.ac.in/handle/123456789/13659-
dc.description.abstractResults on the investigations of the dislocation etch pits in the GaN layers grown on sapphire substrate by metal organic chemical vapor deposition are revealed by wet chemical etching, and dry etching techniques are reported. The wet etching was carried-
dc.language.isoen_US-
dc.publisherSpringer Verlag-
dc.relation.ispartofApplied Physics A: Materials Science and Processing-
dc.titleDislocation density investigation on MOCVD-grown GaN epitaxial layers using wet and dry defect selective etching-
dc.typeArticle-
dc.scopusid35355067700-
dc.scopusid36853505900-
dc.scopusid15920180600-
dc.scopusid7004805387-
dc.scopusid57193984615-
dc.affiliationPandey, A., Solid State Physics Laboratory, Lucknow Road, Delhi, 110054, India, Department of Physics and Centre for Nanotechnology, Indian Institute of Technology Roorkee, Roorkee, 247667, India-
dc.affiliationYadav, B.S., Solid State Physics Laboratory, Lucknow Road,-
dc.description.correspondingauthorPandey, A.; Solid State Physics Laboratory, Lucknow Road, India; email: akhilesh.physics@gmail.com-
Appears in Collections:Journal Publications [PH]

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