Dislocation density investigation on MOCVD-grown GaN epitaxial layers using wet and dry defect selective etching

Pey A.; Yadav B.S.; Rao D.V.S.; Kaur, Davinder; Kapoor A.K.

Full metadata record

DC Field	Value	Language
dc.contributor.author	Pey A.	-
dc.contributor.author	Yadav B.S.	-
dc.contributor.author	Rao D.V.S.	-
dc.contributor.author	Kaur, Davinder	-
dc.contributor.author	Kapoor A.K.	-
dc.date.accessioned	2020-10-15T12:34:56Z	-
dc.date.available	2020-10-15T12:34:56Z	-
dc.date.issued	2016	-
dc.identifier.citation	Applied Physics A: Materials Science and Processing (2016), 122(6): -	-
dc.identifier.issn	9478396	-
dc.identifier.uri	https://doi.org/10.1007/s00339-016-0143-3	-
dc.identifier.uri	http://repository.iitr.ac.in/handle/123456789/13659	-
dc.description.abstract	Results on the investigations of the dislocation etch pits in the GaN layers grown on sapphire substrate by metal organic chemical vapor deposition are revealed by wet chemical etching, and dry etching techniques are reported. The wet etching was carried	-
dc.language.iso	en_US	-
dc.publisher	Springer Verlag	-
dc.relation.ispartof	Applied Physics A: Materials Science and Processing	-
dc.title	Dislocation density investigation on MOCVD-grown GaN epitaxial layers using wet and dry defect selective etching	-
dc.type	Article	-
dc.scopusid	35355067700	-
dc.scopusid	36853505900	-
dc.scopusid	15920180600	-
dc.scopusid	7004805387	-
dc.scopusid	57193984615	-
dc.affiliation	Pandey, A., Solid State Physics Laboratory, Lucknow Road, Delhi, 110054, India, Department of Physics and Centre for Nanotechnology, Indian Institute of Technology Roorkee, Roorkee, 247667, India	-
dc.affiliation	Yadav, B.S., Solid State Physics Laboratory, Lucknow Road,	-
dc.description.correspondingauthor	Pandey, A.; Solid State Physics Laboratory, Lucknow Road, India; email: akhilesh.physics@gmail.com	-
Appears in Collections:	Journal Publications [PH]