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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/13659
Title: Dislocation density investigation on MOCVD-grown GaN epitaxial layers using wet and dry defect selective etching
Authors: Pey A.
Yadav B.S.
Rao D.V.S.
Kaur, Davinder
Kapoor A.K.
Published in: Applied Physics A: Materials Science and Processing
Abstract: Results on the investigations of the dislocation etch pits in the GaN layers grown on sapphire substrate by metal organic chemical vapor deposition are revealed by wet chemical etching, and dry etching techniques are reported. The wet etching was carried
Citation: Applied Physics A: Materials Science and Processing (2016), 122(6): -
URI: https://doi.org/10.1007/s00339-016-0143-3
http://repository.iitr.ac.in/handle/123456789/13659
Issue Date: 2016
Publisher: Springer Verlag
ISSN: 9478396
Author Scopus IDs: 35355067700
36853505900
15920180600
7004805387
57193984615
Author Affiliations: Pandey, A., Solid State Physics Laboratory, Lucknow Road, Delhi, 110054, India, Department of Physics and Centre for Nanotechnology, Indian Institute of Technology Roorkee, Roorkee, 247667, India
Yadav, B.S., Solid State Physics Laboratory, Lucknow Road,
Corresponding Author: Pandey, A.; Solid State Physics Laboratory, Lucknow Road, India; email: akhilesh.physics@gmail.com
Appears in Collections:Journal Publications [PH]

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