A comparative analysis of PBZT synthesized by co-precipitation and sol-gel method

Abstract

A comparative structural and dielectric analysis of bismuth doped PZT ceramics [Pb0.98Bi0.02 (Zr0.52Ti 0.48)O3] prepared by co-precipitation and sol-gel methods has been done. The thermal and crystallization behaviour of the as prepared powders, structural evolution of the ceramics and dielectric properties of the sintered ceramics have been analyzed and compared. Different stages of phase formation have been observed by X-ray diffractogram (XRD) of the samples calcined at various temperatures. Thermal analysis and XRD both confirm that the temperature as low as 250°C is sufficient to achieve the desired phase in the compounds synthesized by sol-gel method whereas a higher temperature (∼ 500°C) is required to achieve the pure perovskite phase in case of the samples derived by chemical co-precipitation method. Ferroelectric transition temperature (7c) and ferro-paraelectric phase transition nature remained the same for both of the samples. Hence, the sol-gel prepared material PBZT may be used for silicon based memory device application, where a low synthesis temperature is a major requirement.