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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/12779
Title: Effect of substrates and surfactants over the evolution of crystallographic texture of nanostructured ZnO thin films deposited through microwave irradiation
Authors: Brahma S.
Jaiswal P.
Suresh, K. S.
Lo K.-Y.
Suwas S.
Shivashankar S.A.
Published in: Thin Solid Films
Abstract: In spite of intense research on ZnO over the past decade, the detailed investigation about the crystallographic texture of as obtained ZnO thin films/coatings, and its deviation with growth surface is scarce. We report a systematic study about the orientation distribution of nanostructured ZnO thin films fabricated by microwave irradiation with the variation of substrates and surfactants. The nanostructured films comprising of ZnO nanorods are grown on semiconductor substrates such as [Si(100), Ge(100)], conducting substrates (ITO-coated glass, Cr coated Si), and polymer coated Si (PMMA/Si) to examine the respective development of crystallographic texture. The ZnO deposited on semiconductor substrates yields mixed texture, whereas c-axis oriented ZnO nanostructured films are obtained by conducting substrate, and PMMA coated Si substrates. Among all the surfactants, nanostructured film produced by using the lower molecular weight of polymeric surfactants (polyvinylpyrrolidone) shows a stronger (0002) texture, and that can be tuned to 10-10 by increasing the molecular weight of the surfactant. The strongest basal pole is achieved for the ZnO deposited on PMMA coated Si as substrate, and cetyl-trimethyl ammonium bromide as cationic surfactant. The texture analysis is carried out by X-ray pole figure analysis using the Schultz reflection method. © 2015 Elsevier B.V.
Citation: Thin Solid Films (2015), 593(): 81-90
URI: https://doi.org/10.1016/j.tsf.2015.09.005
http://repository.iitr.ac.in/handle/123456789/12779
Issue Date: 2015
Publisher: Elsevier
Keywords: Crystallographic texture
Microwave irradiation
Nanostructured ZnO films
Surfactants
ISSN: 406090
Author Scopus IDs: 55500382800
35183110300
54882593400
7402101616
7003627765
56231840100
Author Affiliations: Brahma, S., Department of Physics, National Cheng Kung University, Tainan, 701, Taiwan, Materials Research Centre, Indian Institute of Science, Bangalore, 560012, India
Jaiswal, P., Materials Research Centre, Indian Institute of Science, Bangalore, 560012, India, Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore, 560012, India
Suresh, K.S., Department of Materials Engineering, Indian Institute of Science, Bangalore, 560012, India
Lo, K.-Y., Department of Physics, National Cheng Kung University, Tainan, 701, Taiwan
Suwas, S., Department of Materials Engineering, Indian Institute of Science, Bangalore, 560012, India
Shivashankar, S.A., Materials Research Centre, Indian Institute of Science, Bangalore, 560012, India, Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore, 560012, India
Funding Details: The authors acknowledge the uses of the facility set up under the Institute Nanoscience Initiative sponsored by DST-FIST program and X-ray facility. Sanjaya Brahma thanks the Council of Scientific and Industrial Research (CSIR) for the award of a research associateship. This work was also supported by the National Science Council Taiwan , under Contract number MOST 102-2112-M-006-010-MY3 .
Corresponding Author: Brahma, S.; Department of Physics, National Cheng Kung UniversityTaiwan
Appears in Collections:Journal Publications [MT]

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