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Issue Date	Title	Author(s)
2018	N-and P-type doping in Al-rich AlGaN and A1N	Sarkar, Biplab; Washiyama S.; Breckenridge M.H.; Klump A.; Baker J.N.; Reddy P.; Tweedie J.; Mita S.; Kirste R.; Irving D.L.; Collazo R.; Sitar Z.; Shenai K.Bakowski M.Dudley M.Ohtani N.Raghothamachar B.
2017	Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN	Haidet B.B.; Sarkar, Biplab; Reddy P.; Bryan I.; Bryan Z.; Kirste R.; Collazo R.; Sitar Z.
2020	Numerical Simulation of Enhanced-Reliability Filleted-Gate AlGaN/GaN HEMT	Ray A.; Bordoloi S.; Sarkar, Biplab; Agarwal P.; Trivedi G.
2018	On contacts to III-nitride deep-UV emitters	Sarkar, Biplab; Reddy P.; Klump A.; Rounds R.; Breckenridge M.R.; Haidet B.B.; Mita S.; Kirste R.; Collazo R.; Sitar Z.
2018	On Ni/Au Alloyed Contacts to Mg-Doped GaN	Sarkar, Biplab; Reddy P.; Klump A.; Kaess F.; Rounds R.; Kirste R.; Mita S.; Kohn E.; Collazo R.; Sitar Z.
2018	On Using the Volatile Mem-Capacitive Effect of TiO2 Resistive Random Access Memory to Mimic the Synaptic Forgetting Process	Sarkar, Biplab; Mills S.; Lee B.; Pitts W.S.; Misra V.; Franzon P.D.
2017	Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment	Sarkar, Biplab; Haidet B.B.; Reddy P.; Kirste R.; Collazo R.; Sitar Z.
2018	Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition	Reddy P.; Washiyama S.; Mecouch W.; Hernandez-Balderrama L.H.; Kaess F.; Hayden Breckenridge M.; Sarkar, Biplab; Haidet B.B.; Franke A.; Kohn E.; Collazo R.; Sitar Z.
2020	Polarity Control and Nanoscale Optical Characterization of AlGaN-Based Multiple-Quantum-Wells for Ultraviolet C Emitters	Xu H.; Xu H.; Jiang J.; Jiang J.; Dai Y.; Dai Y.; Cui M.; Cui M.; Li K.-H.; Ge X.; Hoo J.; Yan L.; Guo S.; Ning J.; Sun H.; Sarkar, Biplab; Guo W.; Guo W.; Ye J.; Ye J.
2018	Recent breakthroughs in AlGaN-based UV light emitters	Kirste R.; Mita S.; Guo Q.; Sarkar, Biplab; Kaess F.; Tweedie J.; Collazo R.; Sitar Z.
2021	Role of Interface Induced Gap States in Polar AlxGa1−xN (0 ≤ x ≤ 1) Schottky Diodes	Jadhav A.; Dai Y.; Upadhyay P.; Guo W.; Sarkar, Biplab
2020	Role of polarity in SiN on Al/GaN and the pathway to stable contacts	Reddy P.; Khachariya D.; Szymanski D.; Breckenridge M.H.; Sarkar, Biplab; Pavlidis S.; Collazo R.; Sitar Z.; Kohn E.
2021	Self-powered ultraviolet photodiode based on lateral polarity structure GaN films	Mukhopadhyay S.; Pal H.; Narang S.R.; Guo C.; Ye J.; Guo W.; Sarkar, Biplab
2021	Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength	Kirste R.; Sarkar, Biplab; Reddy P.; Guo Q.; Collazo R.; Sitar Z.
2021	Temperature dependence of barrier height inhomogeneity in β-Ga2O3 Schottky barrier diodes	Jadhav A.; Lyle L.A.M.; Xu Z.; Das K.K.; Porter L.M.; Sarkar, Biplab
2018	The influence of point defects on the thermal conductivity of AlN crystals	Rounds R.; Sarkar, Biplab; Alden D.; Guo Q.; Klump A.; Hartmann C.; Nagashima T.; Kirste R.; Franke A.; Bickermann M.; Kumagai Y.; Sitar Z.; Collazo R.
2020	The role of chemical potential in compensation control in Si:AlGaN	Washiyama S.; Reddy P.; Sarkar, Biplab; Breckenridge M.H.; Guo Q.; Bagheri P.; Klump A.; Kirste R.; Tweedie J.; Mita S.; Sitar Z.; Collazo R.
2018	Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes	Rounds R.; Sarkar, Biplab; Sochacki T.; Bockowski M.; Imanishi M.; Mori Y.; Kirste R.; Collazo R.; Sitar Z.
2018	Thermal conductivity of single-crystalline AlN	Rounds R.; Sarkar, Biplab; Klump A.; Hartmann C.; Nagashima T.; Kirste R.; Franke A.; Bickermann M.; Kumagai Y.; Sitar Z.; Collazo R.
2015	Understanding the gradual reset in Pt/Al2O3/Ni RRAM for synaptic applications	Sarkar, Biplab; Lee B.; Misra V.

Showing results 19 to 38 of 39 < previous next >

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