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Showing results 17 to 36 of 39 < previous   next >
Issue DateTitleAuthor(s)
2017Material considerations for the development of III-nitride power devicesSarkar, Biplab; Reddy P.; Kaess F.; Haidet B.B.; Tweedie J.; Mita S.; Kirste R.; Kohn E.; Collazo R.; Sitar Z.; Ohtani N.; Bakowski M.; Dudley M.; Raghothamachar B.; Shenai K.
2021Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs Using Rational FunctionsJadhav A.; Ozawa T.; Baratov A.; Asubar J.T.; Kuzuhara M.; Wakejima A.; Yamashita S.; Deki M.; Nitta S.; Honda Y.; Amano H.; Roy, Sourajeet; Sarkar, Biplab
2018N-and P-type doping in Al-rich AlGaN and A1NSarkar, Biplab; Washiyama S.; Breckenridge M.H.; Klump A.; Baker J.N.; Reddy P.; Tweedie J.; Mita S.; Kirste R.; Irving D.L.; Collazo R.; Sitar Z.; Shenai K.Bakowski M.Dudley M.Ohtani N.Raghothamachar B.
2017Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaNHaidet B.B.; Sarkar, Biplab; Reddy P.; Bryan I.; Bryan Z.; Kirste R.; Collazo R.; Sitar Z.
2020Numerical Simulation of Enhanced-Reliability Filleted-Gate AlGaN/GaN HEMTRay A.; Bordoloi S.; Sarkar, Biplab; Agarwal P.; Trivedi G.
2018On contacts to III-nitride deep-UV emittersSarkar, Biplab; Reddy P.; Klump A.; Rounds R.; Breckenridge M.R.; Haidet B.B.; Mita S.; Kirste R.; Collazo R.; Sitar Z.
2018On Ni/Au Alloyed Contacts to Mg-Doped GaNSarkar, Biplab; Reddy P.; Klump A.; Kaess F.; Rounds R.; Kirste R.; Mita S.; Kohn E.; Collazo R.; Sitar Z.
2018On Using the Volatile Mem-Capacitive Effect of TiO2 Resistive Random Access Memory to Mimic the Synaptic Forgetting ProcessSarkar, Biplab; Mills S.; Lee B.; Pitts W.S.; Misra V.; Franzon P.D.
2017Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatmentSarkar, Biplab; Haidet B.B.; Reddy P.; Kirste R.; Collazo R.; Sitar Z.
2018Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al compositionReddy P.; Washiyama S.; Mecouch W.; Hernandez-Balderrama L.H.; Kaess F.; Hayden Breckenridge M.; Sarkar, Biplab; Haidet B.B.; Franke A.; Kohn E.; Collazo R.; Sitar Z.
2020Polarity Control and Nanoscale Optical Characterization of AlGaN-Based Multiple-Quantum-Wells for Ultraviolet C EmittersXu H.; Xu H.; Jiang J.; Jiang J.; Dai Y.; Dai Y.; Cui M.; Cui M.; Li K.-H.; Ge X.; Hoo J.; Yan L.; Guo S.; Ning J.; Sun H.; Sarkar, Biplab; Guo W.; Guo W.; Ye J.; Ye J.
2018Recent breakthroughs in AlGaN-based UV light emittersKirste R.; Mita S.; Guo Q.; Sarkar, Biplab; Kaess F.; Tweedie J.; Collazo R.; Sitar Z.
2021Role of Interface Induced Gap States in Polar AlxGa1−xN (0 ≤ x ≤ 1) Schottky DiodesJadhav A.; Dai Y.; Upadhyay P.; Guo W.; Sarkar, Biplab
2020Role of polarity in SiN on Al/GaN and the pathway to stable contactsReddy P.; Khachariya D.; Szymanski D.; Breckenridge M.H.; Sarkar, Biplab; Pavlidis S.; Collazo R.; Sitar Z.; Kohn E.
2021Self-powered ultraviolet photodiode based on lateral polarity structure GaN filmsMukhopadhyay S.; Pal H.; Narang S.R.; Guo C.; Ye J.; Guo W.; Sarkar, Biplab
2021Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelengthKirste R.; Sarkar, Biplab; Reddy P.; Guo Q.; Collazo R.; Sitar Z.
2021Temperature dependence of barrier height inhomogeneity in β-Ga2O3 Schottky barrier diodesJadhav A.; Lyle L.A.M.; Xu Z.; Das K.K.; Porter L.M.; Sarkar, Biplab
2018The influence of point defects on the thermal conductivity of AlN crystalsRounds R.; Sarkar, Biplab; Alden D.; Guo Q.; Klump A.; Hartmann C.; Nagashima T.; Kirste R.; Franke A.; Bickermann M.; Kumagai Y.; Sitar Z.; Collazo R.
2020The role of chemical potential in compensation control in Si:AlGaNWashiyama S.; Reddy P.; Sarkar, Biplab; Breckenridge M.H.; Guo Q.; Bagheri P.; Klump A.; Kirste R.; Tweedie J.; Mita S.; Sitar Z.; Collazo R.
2018Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processesRounds R.; Sarkar, Biplab; Sochacki T.; Bockowski M.; Imanishi M.; Mori Y.; Kirste R.; Collazo R.; Sitar Z.