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Showing results 8 to 27 of 39 < previous   next >
Issue DateTitleAuthor(s)
2021Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS HEMTsJadhav A.; Ozawa T.; Baratov A.; Asubar J.T.; Kuzuhara M.; Wakejima A.; Yamashita S.; Deki M.; Honda Y.; Roy, Sourajeet; Amano H.; Sarkar B.
2021Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTsJadhav A.; Ozawa T.; Baratov A.; Asubar J.T.; Kuzuhara M.; Wakejima A.; Yamashita S.; Deki M.; Honda Y.; Roy, Sourajeet; Amano H.; Sarkar, Biplab
2017High free carrier concentration in p-GaN grown on AlN substratesSarkar, Biplab; Mita S.; Reddy P.; Klump A.; Kaess F.; Tweedie J.; Bryan I.; Bryan Z.; Kirste R.; Kohn E.; Collazo R.; Sitar Z.
2021High n -type conductivity and carrier concentration in Si-implanted homoepitaxial AlNBreckenridge M.H.; Bagheri P.; Guo Q.; Sarkar, Biplab; Khachariya D.; Pavlidis S.; Tweedie J.; Kirste R.; Mita S.; Reddy P.; Collazo R.; Sitar Z.
2016High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studiesReddy P.; Washiyama S.; Kaess F.; Hayden Breckenridge M.; Hernandez-Balderrama L.H.; Haidet B.B.; Alden D.; Franke A.; Sarkar, Biplab; Kohn E.; Collazo R.; Sitar Z.
2014Implications of lower zero-field activation energy of dielectric in Al2O3/HfO2 bi-layer dielectric RRAM forming processSarkar, Biplab; Lee B.; Misra V.; Suzuki Y.; Kobayashi K.; Goux L.; Bersuker G.; Magyari-Kope B.; Shima H.; Shingubara S.; Rhie K.; Karim Z.; Ohyanagi T.
2018Improving the conductivity limits in Si doped Al rich AlGaNReddy P.; Guo Q.; Tweedie J.; Washiyama S.; Kaess F.; Mita S.; Breckenridge M.H.; Kirste R.; Collazo R.; Klump A.; Sarkar, Biplab; Sitar Z.
2020Influences of series resistance and epitaxial doping densities on the terahertz performance of gallium nitride avalanche transit time source: A high-power 1.0 THz radiatorKhan S.; Acharyya A.; Biswas A.; Sarkar, Biplab; Inokawa H.; Dhar R.S.
2013Investigation of intermediate dielectric for dual floating gate MOSFETSarkar, Biplab; Jayanti S.; Di Spigna N.; Lee B.; Misra V.; Franzon P.
2017Material considerations for the development of III-nitride power devicesSarkar, Biplab; Reddy P.; Kaess F.; Haidet B.B.; Tweedie J.; Mita S.; Kirste R.; Kohn E.; Collazo R.; Sitar Z.; Ohtani N.; Bakowski M.; Dudley M.; Raghothamachar B.; Shenai K.
2021Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs Using Rational FunctionsJadhav A.; Ozawa T.; Baratov A.; Asubar J.T.; Kuzuhara M.; Wakejima A.; Yamashita S.; Deki M.; Nitta S.; Honda Y.; Amano H.; Roy, Sourajeet; Sarkar, Biplab
2018N-and P-type doping in Al-rich AlGaN and A1NSarkar, Biplab; Washiyama S.; Breckenridge M.H.; Klump A.; Baker J.N.; Reddy P.; Tweedie J.; Mita S.; Kirste R.; Irving D.L.; Collazo R.; Sitar Z.; Shenai K.Bakowski M.Dudley M.Ohtani N.Raghothamachar B.
2017Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaNHaidet B.B.; Sarkar, Biplab; Reddy P.; Bryan I.; Bryan Z.; Kirste R.; Collazo R.; Sitar Z.
2020Numerical Simulation of Enhanced-Reliability Filleted-Gate AlGaN/GaN HEMTRay A.; Bordoloi S.; Sarkar, Biplab; Agarwal P.; Trivedi G.
2018On contacts to III-nitride deep-UV emittersSarkar, Biplab; Reddy P.; Klump A.; Rounds R.; Breckenridge M.R.; Haidet B.B.; Mita S.; Kirste R.; Collazo R.; Sitar Z.
2018On Ni/Au Alloyed Contacts to Mg-Doped GaNSarkar, Biplab; Reddy P.; Klump A.; Kaess F.; Rounds R.; Kirste R.; Mita S.; Kohn E.; Collazo R.; Sitar Z.
2018On Using the Volatile Mem-Capacitive Effect of TiO2 Resistive Random Access Memory to Mimic the Synaptic Forgetting ProcessSarkar, Biplab; Mills S.; Lee B.; Pitts W.S.; Misra V.; Franzon P.D.
2017Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatmentSarkar, Biplab; Haidet B.B.; Reddy P.; Kirste R.; Collazo R.; Sitar Z.
2018Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al compositionReddy P.; Washiyama S.; Mecouch W.; Hernandez-Balderrama L.H.; Kaess F.; Hayden Breckenridge M.; Sarkar, Biplab; Haidet B.B.; Franke A.; Kohn E.; Collazo R.; Sitar Z.
2020Polarity Control and Nanoscale Optical Characterization of AlGaN-Based Multiple-Quantum-Wells for Ultraviolet C EmittersXu H.; Xu H.; Jiang J.; Jiang J.; Dai Y.; Dai Y.; Cui M.; Cui M.; Li K.-H.; Ge X.; Hoo J.; Yan L.; Guo S.; Ning J.; Sun H.; Sarkar, Biplab; Guo W.; Guo W.; Ye J.; Ye J.
Showing results 8 to 27 of 39 < previous   next >