Skip navigation

Browsing by Author Scopus IDs 8544299000

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:  
Showing results 1 to 11 of 11
Issue DateTitleAuthor(s)
2020Analysis and Modeling of Polarization Gradient Effect on Negative Capacitance FETKao M.-Y.; Pahwa G.; Dasgupta, Avirup; Salahuddin S.; Hu C.
2020BSIM compact model of quantum confinement in advanced nanosheet FETsDasgupta, Avirup; Parihar S.S.; Kushwaha P.; Agarwal H.; Kao M.-Y.; Salahuddin S.; Chauhan Y.S.; Hu C.
2020BSIM-IMG: Advanced Model for FDSOI Transistors with Back Channel InversionAgarwal H.; Kushwaha P.; Dasgupta, Avirup; Y-Kao M.; Morshed T.; Workman G.; Shanbhag K.; Li X.; Vinothkumar V.; Chauhan Y.S.; Salahuddin S.; Hu C.
2019Characterization and Modeling of Flicker Noise in FinFETs at Advanced Technology NodeKushwaha P.; Agarwal H.; Lin Y.-K.; Dasgupta, Avirup; Kao M.-Y.; Lu Y.; Yue Y.; Chen X.; Wang J.; Sy W.; Yang F.; Chidambaram P.R.C.; Salahuddin S.; Hu C.
2021Compact Modeling of Temperature Effects in FDSOI and FinFET Devices down to Cryogenic TemperaturesPahwa G.; Kushwaha P.; Dasgupta, Avirup; Salahuddin S.; Hu C.
2020Design Optimization Techniques in Nanosheet Transistor for RF ApplicationsKushwaha P.; Dasgupta, Avirup; Kao M.-Y.; Agarwal H.; Salahuddin S.; Hu C.
2021Energy Storage and Reuse in Negative CapacitanceKao M.-Y.; Liao Y.-H.; Pahwa G.; Dasgupta, Avirup; Salahuddin S.; Hu C.
2019Modeling the Quantum Gate capacitance of Nano-Sheet Gate-All-Around MOSFETKushwaha P.; Agarwal H.; Mishra V.; Dasgupta, Avirup; Lin Y.-K.; Kao M.-Y.; Chauhan Y.S.; Salahuddin S.; Hu C.
2019Optimization of NCFET by Matching Dielectric and Ferroelectric Nonuniformly Along the ChannelKao M.-Y.; Lin Y.-K.; Agarwal H.; Liao Y.-H.; Kushwaha P.; Dasgupta, Avirup; Salahuddin S.; Hu C.
2019Proposal for capacitance matching in negative capacitance field-effect transistorsAgarwal H.; Kushwaha P.; Lin Y.-K.; Kao M.-Y.; Liao Y.-H.; Dasgupta, Avirup; Salahuddin S.; Hu C.
2019Spacer Engineering in Negative Capacitance FinFETsLin Y.-K.; Agarwal H.; Kao M.-Y.; Zhou J.; Liao Y.-H.; Dasgupta, Avirup; Kushwaha P.; Salahuddin S.; Hu C.