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Showing results 1 to 20 of 118  next >
Issue DateTitleAuthor(s)
2016A compact half-wave folded waveguide resonator for dual-band applicationsSnehalatha L.; Pathak, Nagendra Prasad; Manhas, Sanjeev Kumar
2016A compact ridge cavity resonator for concurrent dual-band applicationsSnehalatha L.; Pathak, Nagendra Prasad; Manhas, Sanjeev Kumar
2014A degradation model of double gate and gate-all-around MOSFETs with interface trapped charges including effects of channel mobile charge carriersShankar R.; Kaushal G.; Maheshwaram S.; Dasgupta, Sudeb; Manhas, Sanjeev Kumar
2010A high performance vertical Si nanowire CMOS for ultra high density circuitsMaheshwaram S.; Kaushal G.; Manhas, Sanjeev Kumar
2014A novel single cavity non-degenerate dual-mode dual-band resonatorSnehalatha L.; Pathak, Nagendra Prasad; Manhas, Sanjeev Kumar; Mukherjea S.; Krishnaswamy D.; Mueller P.; Comer D.E.; Mallick B.; Sikora A.; Thampi S.M.
2017A reconfigurable dual-beam planar antenna with beam switching capabilityLalithamma S.; Pathak, Nagendra Prasad; Manhas, Sanjeev Kumar
2016A simple method for detection of anionic detergents in milk using unmodified gold nanoparticlesKumar P.; Kumar P.; Manhas, Sanjeev Kumar; Navani, Naveen Kumar
2012A simulation study of the effect of platinum contact on CNT based gas sensors using self-consistent field with NEGF methodBasak A.; Manhas S.K.; Kapil G.; Dasgupta, Sudeb; Jain N.
2017A unified Verilog-A compact model for lateral Si nanowire (NW) FET incorporating parasitics for circuit simulationPrakash O.; Maheshwaram S.; Sharma M.; Anand, Bulusu; Saxena A.K.; Manhas, Sanjeev Kumar
2017A unified Verilog-A compact model for lateral Si nanowire (NW) FET incorporating parasitics for circuit simulationPrakash O.; Maheshwaram S.; Sharma M.; Anand, Bulusu; Saxena A.K.; Manhas S.K.
2016A variation aware timing model for a 2-input NAND gate and its use in sub-65 nm CMOS standard cell characterizationKaur B.; Sharma A.; Alam N.; Manhas, Sanjeev Kumar; Anand, Bulusu
2016A variation aware timing model for a 2-input NAND gate and its use in sub-65 nm CMOS standard cell characterizationKaur B.; Sharma A.; Alam N.; Manhas S.K.; Anand, Bulusu
2019Altering the Schottky Barrier Height and Conductance by Using Metal Nanoparticles in Carbon Nanotubes-Based DevicesKumar N.; Navani, Naveen Kumar; Manhas, Sanjeev Kumar
2015An 8 bit, 100 kS/s, switch-capacitor DAC SAR ADC for RFID applicationsJoshi A.; Manhas, Sanjeev Kumar; Sharma S.K.; Dasgupta S.
2015An 8 bit, 100 kS/s, switch-capacitor DAC SAR ADC for RFID applicationsJoshi A.; Manhas S.K.; Sharma S.K.; Dasgupta, Sudeb
2012An accurate current source model for CMOS based combinational logic cellKaur B.; Vundavalli S.; Manhas, Sanjeev Kumar; Dasgupta, Sudeb; Anand, Bulusu
2012An accurate current source model for CMOS based combinational logic cellKaur B.; Vundavalli S.; Manhas S.K.; Dasgupta S.; Anand, Bulusu
2013An efficient method for ECSM characterization of CMOS inverter in nanometer range technologiesKaur B.; Miryala S.; Manhas, Sanjeev Kumar; Anand, Bulusu
2013An efficient method for ECSM characterization of CMOS inverter in nanometer range technologiesKaur B.; Miryala S.; Manhas S.K.; Anand, Bulusu
2012Analysis of crosstalk delay and area for MWNT and bundled SWNT in global VLSI interconnectsMajumder M.K.; Pandya N.D.; Kumar Kaushik, Brajesh; Manhas, Sanjeev Kumar