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Showing results 1 to 5 of 5
Issue DateTitleAuthor(s)
2021Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS HEMTsJadhav A.; Ozawa T.; Baratov A.; Asubar J.T.; Kuzuhara M.; Wakejima A.; Yamashita S.; Deki M.; Honda Y.; Roy, Sourajeet; Amano H.; Sarkar B.
2021Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTsJadhav A.; Ozawa T.; Baratov A.; Asubar J.T.; Kuzuhara M.; Wakejima A.; Yamashita S.; Deki M.; Honda Y.; Roy, Sourajeet; Amano H.; Sarkar, Biplab
2021Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs Using Rational FunctionsJadhav A.; Ozawa T.; Baratov A.; Asubar J.T.; Kuzuhara M.; Wakejima A.; Yamashita S.; Deki M.; Nitta S.; Honda Y.; Amano H.; Roy, Sourajeet; Sarkar, Biplab
2021Role of Interface Induced Gap States in Polar AlxGa1−xN (0 ≤ x ≤ 1) Schottky DiodesJadhav A.; Dai Y.; Upadhyay P.; Guo W.; Sarkar, Biplab
2021Temperature dependence of barrier height inhomogeneity in β-Ga2O3 Schottky barrier diodesJadhav A.; Lyle L.A.M.; Xu Z.; Das K.K.; Porter L.M.; Sarkar, Biplab