| Issue Date | Title | Author(s) |
| 2018 | 6kW/cm2 UVC laser threshold in optically pumped lasers achieved by controlling point defect formation | Kirste R.; Guo Q.; Dycus J.H.; Franke A.; Mita S.; Sarkar, Biplab; Reddy P.; LeBeau J.M.; Collazo R.; Sitar Z. |
| 2019 | Al rich AlGaN based APDs on single crystal AlN with solar blindness and room temperature operation | Reddy P.; Hayden Breckenridge M.; Klump A.; Guo Q.; Mita S.; Sarkar, Biplab; Kirste R.; Moody B.; Tweedie J.; Collazo R.; Sitar Z. |
| 2018 | Au:Ga Alloyed clusters to enhance Al contacts to P-type GaN | Klump A.; Kaess F.; Sarkar, Biplab; Kirste R.; Collazo R.; Reddy P.; Mita S.; Sitar Z.; Breckenridge M.H.; Kohn E. |
| 2021 | High n -type conductivity and carrier concentration in Si-implanted homoepitaxial AlN | Breckenridge M.H.; Bagheri P.; Guo Q.; Sarkar, Biplab; Khachariya D.; Pavlidis S.; Tweedie J.; Kirste R.; Mita S.; Reddy P.; Collazo R.; Sitar Z. |
| 2018 | Improving the conductivity limits in Si doped Al rich AlGaN | Reddy P.; Guo Q.; Tweedie J.; Washiyama S.; Kaess F.; Mita S.; Breckenridge M.H.; Kirste R.; Collazo R.; Klump A.; Sarkar, Biplab; Sitar Z. |
| 2018 | N-and P-type doping in Al-rich AlGaN and A1N | Sarkar, Biplab; Washiyama S.; Breckenridge M.H.; Klump A.; Baker J.N.; Reddy P.; Tweedie J.; Mita S.; Kirste R.; Irving D.L.; Collazo R.; Sitar Z.; Shenai K.Bakowski M.Dudley M.Ohtani N.Raghothamachar B. |
| 2018 | On contacts to III-nitride deep-UV emitters | Sarkar, Biplab; Reddy P.; Klump A.; Rounds R.; Breckenridge M.R.; Haidet B.B.; Mita S.; Kirste R.; Collazo R.; Sitar Z. |
| 2020 | Role of polarity in SiN on Al/GaN and the pathway to stable contacts | Reddy P.; Khachariya D.; Szymanski D.; Breckenridge M.H.; Sarkar, Biplab; Pavlidis S.; Collazo R.; Sitar Z.; Kohn E. |
| 2021 | Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength | Kirste R.; Sarkar, Biplab; Reddy P.; Guo Q.; Collazo R.; Sitar Z. |
| 2020 | The 2020 UV emitter roadmap | Amano H.; Collazo R.; De Santi C.; Einfeldt S.; Funato M.; Glaab J.; Hagedorn S.; Hirano A.; Hirayama H.; Ishii R.; Kashima Y.; Kawakami Y.; Kirste R.; Kneissl M.; Martin R.; Mehnke F.; Meneghini M.; Ougazzaden A.; Parbrook P.J.; Rajan S.; Reddy P.; Römer |
| 2020 | The role of chemical potential in compensation control in Si:AlGaN | Washiyama S.; Reddy P.; Sarkar, Biplab; Breckenridge M.H.; Guo Q.; Bagheri P.; Klump A.; Kirste R.; Tweedie J.; Mita S.; Sitar Z.; Collazo R. |
