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Showing results 1 to 11 of 11
Issue DateTitleAuthor(s)
20186kW/cm2 UVC laser threshold in optically pumped lasers achieved by controlling point defect formationKirste R.; Guo Q.; Dycus J.H.; Franke A.; Mita S.; Sarkar, Biplab; Reddy P.; LeBeau J.M.; Collazo R.; Sitar Z.
2019Al rich AlGaN based APDs on single crystal AlN with solar blindness and room temperature operationReddy P.; Hayden Breckenridge M.; Klump A.; Guo Q.; Mita S.; Sarkar, Biplab; Kirste R.; Moody B.; Tweedie J.; Collazo R.; Sitar Z.
2018Au:Ga Alloyed clusters to enhance Al contacts to P-type GaNKlump A.; Kaess F.; Sarkar, Biplab; Kirste R.; Collazo R.; Reddy P.; Mita S.; Sitar Z.; Breckenridge M.H.; Kohn E.
2021High n -type conductivity and carrier concentration in Si-implanted homoepitaxial AlNBreckenridge M.H.; Bagheri P.; Guo Q.; Sarkar, Biplab; Khachariya D.; Pavlidis S.; Tweedie J.; Kirste R.; Mita S.; Reddy P.; Collazo R.; Sitar Z.
2018Improving the conductivity limits in Si doped Al rich AlGaNReddy P.; Guo Q.; Tweedie J.; Washiyama S.; Kaess F.; Mita S.; Breckenridge M.H.; Kirste R.; Collazo R.; Klump A.; Sarkar, Biplab; Sitar Z.
2018N-and P-type doping in Al-rich AlGaN and A1NSarkar, Biplab; Washiyama S.; Breckenridge M.H.; Klump A.; Baker J.N.; Reddy P.; Tweedie J.; Mita S.; Kirste R.; Irving D.L.; Collazo R.; Sitar Z.; Shenai K.Bakowski M.Dudley M.Ohtani N.Raghothamachar B.
2018On contacts to III-nitride deep-UV emittersSarkar, Biplab; Reddy P.; Klump A.; Rounds R.; Breckenridge M.R.; Haidet B.B.; Mita S.; Kirste R.; Collazo R.; Sitar Z.
2020Role of polarity in SiN on Al/GaN and the pathway to stable contactsReddy P.; Khachariya D.; Szymanski D.; Breckenridge M.H.; Sarkar, Biplab; Pavlidis S.; Collazo R.; Sitar Z.; Kohn E.
2021Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelengthKirste R.; Sarkar, Biplab; Reddy P.; Guo Q.; Collazo R.; Sitar Z.
2020The 2020 UV emitter roadmapAmano H.; Collazo R.; De Santi C.; Einfeldt S.; Funato M.; Glaab J.; Hagedorn S.; Hirano A.; Hirayama H.; Ishii R.; Kashima Y.; Kawakami Y.; Kirste R.; Kneissl M.; Martin R.; Mehnke F.; Meneghini M.; Ougazzaden A.; Parbrook P.J.; Rajan S.; Reddy P.; Römer
2020The role of chemical potential in compensation control in Si:AlGaNWashiyama S.; Reddy P.; Sarkar, Biplab; Breckenridge M.H.; Guo Q.; Bagheri P.; Klump A.; Kirste R.; Tweedie J.; Mita S.; Sitar Z.; Collazo R.