| Issue Date | Title | Author(s) |
| 2018 | Au:Ga Alloyed clusters to enhance Al contacts to P-type GaN | Klump A.; Kaess F.; Sarkar, Biplab; Kirste R.; Collazo R.; Reddy P.; Mita S.; Sitar Z.; Breckenridge M.H.; Kohn E. |
| 2016 | Challenges and breakthroughs in the development of AlGaN-based UVC lasers | Kirste R.; Sarkar, Biplab; Kaess F.; Bryan I.; Bryan Z.; Tweedie J.; Collazo R.; Sitar Z. |
| 2017 | Defect-free Ni/GaN Schottky barrier behavior with high temperature stability | Reddy P.; Sarkar, Biplab; Kaess F.; Gerhold M.; Kohn E.; Collazo R.; Sitar Z. |
| 2017 | High free carrier concentration in p-GaN grown on AlN substrates | Sarkar, Biplab; Mita S.; Reddy P.; Klump A.; Kaess F.; Tweedie J.; Bryan I.; Bryan Z.; Kirste R.; Kohn E.; Collazo R.; Sitar Z. |
| 2016 | High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies | Reddy P.; Washiyama S.; Kaess F.; Hayden Breckenridge M.; Hernandez-Balderrama L.H.; Haidet B.B.; Alden D.; Franke A.; Sarkar, Biplab; Kohn E.; Collazo R.; Sitar Z. |
| 2018 | Improving the conductivity limits in Si doped Al rich AlGaN | Reddy P.; Guo Q.; Tweedie J.; Washiyama S.; Kaess F.; Mita S.; Breckenridge M.H.; Kirste R.; Collazo R.; Klump A.; Sarkar, Biplab; Sitar Z. |
| 2017 | Material considerations for the development of III-nitride power devices | Sarkar, Biplab; Reddy P.; Kaess F.; Haidet B.B.; Tweedie J.; Mita S.; Kirste R.; Kohn E.; Collazo R.; Sitar Z.; Ohtani N.; Bakowski M.; Dudley M.; Raghothamachar B.; Shenai K. |
| 2018 | On Ni/Au Alloyed Contacts to Mg-Doped GaN | Sarkar, Biplab; Reddy P.; Klump A.; Kaess F.; Rounds R.; Kirste R.; Mita S.; Kohn E.; Collazo R.; Sitar Z. |
| 2018 | Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition | Reddy P.; Washiyama S.; Mecouch W.; Hernandez-Balderrama L.H.; Kaess F.; Hayden Breckenridge M.; Sarkar, Biplab; Haidet B.B.; Franke A.; Kohn E.; Collazo R.; Sitar Z. |
| 2018 | Recent breakthroughs in AlGaN-based UV light emitters | Kirste R.; Mita S.; Guo Q.; Sarkar, Biplab; Kaess F.; Tweedie J.; Collazo R.; Sitar Z. |
