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Issue DateTitleAuthor(s)
2013A surface potential based model for GaN HEMTsAgnihotri S.; Ghosh S.; Dasgupta, Avirup; Chauhan Y.S.; Khandelwal S.
2017Accurate modeling of centroid shift in III-V FETs including non-linear potential profile and wave-function penetrationSingh D.K.; Dasgupta, Avirup; Chauhan Y.S.
2017An Improved Model for Quasi-Ballistic Transport in MOSFETsDasgupta, Avirup; Agarwal A.; Chauhan Y.S.
2019Analysis and Compact Modeling of Insulator-Metal Transition Material-Based PhaseFET Including Hysteresis and Multidomain SwitchingDasgupta, Avirup; Verma A.; Chauhan Y.S.
2014Analysis and modeling of quantum capacitance in III-V transistorsDasgupta, Avirup; Yadav C.; Rastogi P.; Agarwal A.; Chauhan Y.S.
2015ASM-HEMT: Compact model for GaN HEMTsDasgupta, Avirup; Ghosh S.; Chauhan Y.S.; Khandelwal S.
2019Atomistic simulation and compact modeling of atomically thin transistorsChauhan Y.S.; Yadav C.; Dasgupta, Avirup; Rastogi P.
2020BSIM compact model of quantum confinement in advanced nanosheet FETsDasgupta, Avirup; Parihar S.S.; Kushwaha P.; Agarwal H.; Kao M.-Y.; Salahuddin S.; Chauhan Y.S.; Hu C.
2015BSIM-CMG: Standard FinFET compact model for advanced circuit designDuarte J.P.; Khandelwal S.; Medury A.; Hu C.; Kushwaha P.; Agarwal H.; Dasgupta, Avirup; Chauhan Y.S.; Dielacher F.; Pribyl W.; Hueber G.
2020BSIM-IMG: Advanced Model for FDSOI Transistors with Back Channel InversionAgarwal H.; Kushwaha P.; Dasgupta, Avirup; Y-Kao M.; Morshed T.; Workman G.; Shanbhag K.; Li X.; Vinothkumar V.; Chauhan Y.S.; Salahuddin S.; Hu C.
2016Capacitance modeling in dual field-plate power GaN HEMT for accurate switching behaviorAhsan S.A.; Ghosh S.; Sharma K.; Dasgupta, Avirup; Khandelwal S.; Chauhan Y.S.
2016Characterization of RF Noise in UTBB FD-SOI MOSFETKushwaha P.; Dasgupta, Avirup; Sahu Y.; Khandelwal S.; Hu C.; Chauhan Y.S.
2020Compact Model for Geometry Dependent Mobility in Nanosheet FETsDasgupta, Avirup; Parihar S.S.; Agarwal H.; Kushwaha P.; Chauhan Y.S.; Hu C.
2018Compact Modeling of Cross-Sectional Scaling in Gate-All-Around FETs: 3-D to 1-D TransitionDasgupta, Avirup; Rastogi P.; Agarwal A.; Hu C.; Chauhan Y.S.
2017Compact Modeling of Drain Current Thermal Noise in FDSOI MOSFETs Including Back-Bias EffectSahu Y.; Kushwaha P.; Dasgupta, Avirup; Hu C.; Chauhan Y.S.
2014Compact modeling of flicker noise in HEMTsDasgupta, Avirup; Khandelwal S.; Chauhan Y.S.
2020Compact Modeling of Negative Capacitance Nanosheet FET including Quasi-Ballistic TransportGaidhane A.D.; Pahwa G.; Dasgupta, Avirup; Verma A.; Chauhan Y.S.
2020Compact Modeling of Negative-Capacitance FDSOI FETs for Circuit SimulationsDabhi C.K.; Parihar S.S.; Dasgupta, Avirup; Chauhan Y.S.
2016Compact Modeling of Surface Potential, Charge, and Current in Nanoscale Transistors Under Quasi-Ballistic RegimeDasgupta, Avirup; Agarwal A.; Khandelwal S.; Chauhan Y.S.
2020Compact modeling of surface potential, drain current and terminal charges in negative capacitance nanosheet FET including quasi-ballistic transportGaidhane A.D.; Pahwa G.; Dasgupta, Avirup; Verma A.; Chauhan Y.S.